Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides

IEEE Journal of Photovoltaics

Volumn 5, Issue 5, 2015, Pages 1348-1356

  Steinkemper, H ^a   Feldmann, F ^a   Bivour, M ^a   Hermle, M ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Numerical simulation; photovoltaic cells; semiconductor device modeling; tunneling

Indexed keywords

AMORPHOUS MATERIALS; COMPUTER SIMULATION; ELECTRON TUNNELING; INTERFACES (MATERIALS); NUMERICAL MODELS; OPEN CIRCUIT VOLTAGE; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON; SILICON SOLAR CELLS; SOLAR CELLS;

DEVICE PERFORMANCE; NUMERICAL DEVICE SIMULATION; OXIDE INTERFACES; OXIDE THICKNESS; PARTIALLY CRYSTALLINE; POLYCRYSTALLINE; SELECTIVE CONTACTS; SURFACE RECOMBINATION VELOCITIES;

AMORPHOUS SILICON;

EID: 84940037921     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2455346     Document Type: Article

References (34)

1. W. G. J. H. M. Van Sark, L. Korte, and F. Roca,Eds., Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. (Engineering Materials), New York, NY, USA: Springer, 2012, p. 582.
2. P. P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser, "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing," J. Appl. Phys., vol. 93, pp. 1598-1604, 2003.
3. Y. Kwark, R. A. Sinton, and R. M. Swanson, "Low J. contact structures using sipos and polysilicon films," in Proc. IEEE 18th Photovoltaic Spec. Conf., Las Vegas, NV, USA, 1985, pp. 787-792.
4. F. A. Lindholm, A. Neugroschel, M. Arienzo, and P. A. Iles, "Heavily doped polysilicon-contact solar cells," IEEE Electron. Device Lett., vol. EDL-6, no. 7, pp. 363-365, Jul. 1985.
5. E.Yablonovitch, T.Gmitter, R.M. Swanson, andY.H.Kwark, "A720mV open circuit voltage SiOx:c.Si:SiOx double heterostructure solar cell," Appl. Phys. Lett., vol. 47, pp. 1211-1213, 1985.
6. N. G. Tarr, "A polysilicon emitter solar cell," IEEE Electron. Device Lett., vol. EDL-6, no. 12, pp. 655-658, Dec. 1985.
7. J.Y.Gan andR.M. Swanson, "Polysilicon emitters for silicon concentrator solar cells," in Proc. 21st IEEE Photovoltaic Spec. Conf., Kissimmee, FL, USA, 1990, pp. 245-250.
8. M. A. Green, "Intrinsic concentration, effective densities of states, and effective mass in silicon," J. Appl. Phys., vol. 67, pp. 2944-2954, 1990.
9. A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," J. Appl. Phys., vol. 84, pp. 3684-3695, 1998.
10. D. B. M. Klaassen, "A unifiedmobility model for device simulation - Part I. Model equations and concentration dependence," Solid-State Electron., vol. 35, pp. 953-959, 1992.
11. D. B. M. Klaassen, "A unifiedmobility model for device simulation - Part II. Temperature dependence of carrier mobility and lifetime," Solid State Electron., vol. 35, pp. 961-967, 1992.
12. A. Richter, S.W. Glunz, F.Werner, J. Schmidt, and A. Cuevas, "Improved quantitative description of Auger recombination in crystalline silicon," Phys. Rev. B, vol. 86, pp. 1-14, 2012.
13. Synopsys. (2013). Synopsys TCAD, Rel. H-2013.03 [Online]. Available: http://www.synopsys.com
14. P. Borden, L. Xu, B. McDougall, C. P. Chang, D. Pysch, P. Voisin, and S. W. Glunz, "Polysilicon tunnel junctions as alternates to diffused junctions," in Proc. 23rd Eur. Photovoltaic Sol. Energy Conf., Valencia, Spain, 2008, pp. 1149-1152.
15. F. Feldmann, M. Bivour, C. Reichel, M. Hermle, and S.W. Glunz, "A passivated rear contact for high-efficiency n-type silicon solar cells enabling high VocS and FF>82%," in Proc. 28th Eur. PV Sol. Energy Conf. Exhib., Paris, France, 2013, pp. 988-992.
16. J. B. Heng et al., ">23% High-efficiency tunnel oxide junction bifacial solar cell with electroplated cu gridlines," IEEE J. Photovoltaics, vol. 5, no. 1, pp. 82-86, Jan. 2015.
17. U. Römer et al., "Recombination behavior and contact resistance of n+ and p +poly-crystalline Si/mono-crystalline Si junctions," Sol. Energy Matter. Sol. Cells, vol. 131, pp. 85-91, 2014.
18. F. Feldmann et al., "Tunnel oxide passivated contacts as an alternative to partial rear contacts," Sol. Energy Mater. Sol. Cells, vol. 131, pp. 46-50, 2014.
19. A. Cuevas, "Geometrical analysis of solar cells with partial rear contacts," IEEE J. Photovoltaics, vol. 2, no. 4, pp. 485-493, Oct. 2012.
20. F. Feldmann et al., "Efficient carrier-selective p-and n-contacts for Si solar cells," Sol. Energy Mater. Sol. Cells, vol. 131, pp. 100-104, 2014.
21. I. R. C. Post, P. Ashburn, and G. R. Wolstenholme, "Polysilicon emitters for bipolar transistors: A review and re-evaluation of theory and experiment," IEEE Trans. Electron. Devices, vol. 39, no. 4, pp. 1717-1731, Jul. 1992.
22. R. Peibst et al., "A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions," IEEE J. Photovoltaics, vol. 4, no. 3, pp. 841-850, May 2014.
23. J. Shewchun, R. Singh, and M. A. Green, "Theory of metal-insulatorsemiconductor solar cells," J. Appl. Phys., vol. 48, pp. 765-770, 1977.
24. U. Wurfel, A. Cuevas, and P. Wurfel, "Charge carrier separation in solar cells," IEEE J. Photovoltaics, vol. 5, no. 1, pp. 461-469, Jan. 2015.
25. H. Steinkemper, F. Feldmann, M. Bivour, and M. Hermle, "Theoretical investigation of carrier-selective contacts featuring tunnel oxides bymeans of numerical device simulation," presented at the SiliconPV, Constance, Germany, 2015.
26. M. Hermle, "Approaching efficiencies above 25% with both sidescontacted silicon solar cells," presented at the 42nd IEEE PVSC, New Orleans, LA, USA, 2015.
27. P. P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells - A review," J. Comput. Electron., vol. 10, pp. 314-330, 2011.
28. M. Ieong, P. M. Solomon, S. E. Laux, H. S. P.Wong, andD. Chidambarrao, "Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model," in Proc. Int. Electron Devices Meeting, 1998, pp. 733-736.
29. R. Tsu and L. Esaki, "Tunneling in a finite superlattice," Appl. Phys. Lett., vol. 22, pp. 562-564, 1973.
30. C. R. Crowell, "The Richardson constant for thermionic emission in Schottky barrier diodes," Solid-State Electron., vol. 8, pp. 395-399, 1965.
31. H. Watanabe, D. Matsushita, and K. Muraoka, "Determination of tunnel mass and physical thickness of gate oxide including poly-Si/SiO2 and Si/SiO2 interfacial transition layers," IEEE Trans. Electron. Devices, vol. 53, no. 6, pp. 1323-1330, Jun. 2006.
32. D. König, M. Rennau, and M. Henker, "Direct tunneling effective mass of electrons determined by intrinsic charge-up process," Solid-State Electron., vol. 51, pp. 650-654, 2007.
33. R. K. Chanana, "Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections," J. Appl. Phys., vol. 109, pp. 104508-1-104508-6, 2011.
34. M. Bivour et al., "Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements," IEEE J. Photovoltaics, vol. 4, no. 6, pp. 566-574, Mar. 2014.