The optimization of chemical mechanical planarization process-parameters of c-plane gallium-nitride using Taguchi method and grey relational analysis

Materials and Design

Volumn 104, Issue , 2016, Pages 392-403

  Nelabhotla, D M ^a   Jayaraman, T V ^b   Asghar, K ^a   Das, D ^a  

^a UNIVERSITY OF HYDERABAD   (India)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

C plane GaN; Chemical mechanical planarization; Grey relational analysis; Taguchi method

Indexed keywords

ALUMINUM; CHEMICAL MECHANICAL POLISHING; DATA FLOW ANALYSIS; GALLIUM NITRIDE; INFORMATION THEORY; NITRIDES; SURFACE ROUGHNESS; TAGUCHI METHODS;

CHEMICAL-MECHANICAL PLANARIZATION PROCESS; GALLIUM NITRIDES (GAN); GREY RELATIONAL ANALYSIS; GREY RELATIONAL GRADE (GRG); MATERIAL REMOVAL RATE; OPTIMUM COMBINATION; OPTIMUM CONDITIONS; POTASSIUM PERMANGANATE;

CHEMICAL ANALYSIS;

EID: 84969780545     PISSN: 02641275     EISSN: 18734197     Source Type: Journal    
DOI: 10.1016/j.matdes.2016.05.031     Document Type: Article

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