Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing

Applied Surface Science

Volumn 338, Issue , 2015, Pages 85-91

  Gong, Hua ^a   Pan, Guoshun ^a   Zhou, Yan ^a   Shi, Xiaolei ^a   Zou, Chunli ^a   Zhang, Suman ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Atomic step structure; Catalyst; Chemical mechanical polishing; Gallium nitride; SiO 2 abrasive

Indexed keywords

ABRASIVES; ATOMIC FORCE MICROSCOPY; CATALYSTS; CHARACTERIZATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOCATALYSTS; NANOPARTICLES; NITRIDES; POLISHING; SILICA; SURFACE PROPERTIES;

ATOMIC STEP; CHEMICAL MECHANICAL POLISHING(CMP); GALLIUM NITRIDE (GAN); HIGH-EFFICIENCY; INERT MATERIALS; MATERIAL REMOVAL RATE; SURFACE CHARACTERIZATION; SURFACE PREPARATION;

CHEMICAL MECHANICAL POLISHING;

EID: 84925402952     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.02.107     Document Type: Article

References (25)

1. J.J. Gagliardi, D. Kim, J.J. Sokol, L.A. Zazzera, V.D. Romero, M.R. Atkinson, F. Nabulsi, and H. Zhang A case for 2-body material removal in prime LED sapphire substrate lapping and polishing J. Manuf. Process. 15 2013 348 354 http://www.sciencedirect.com/science/article/pii/S1526612512001004
2. H. Zhu, L.A. Tessaroto, R. Sabia, V.A. Greenhut, M. Smith, and D.E. Niesz Chemical mechanical polishing (CMP) anisotropy in sapphire Appl. Surf. Sci. 236 2004 120 130 http://www.sciencedirect.com/science/article/pii/S0169433204005276
3. H.M. Kim, R. Manivannan, D.J. Moon, H. Xiong, and J.G. Park Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates Wear 302 2013 1340 1344 http://www.sciencedirect.com/science/article/pii/S0043164812004188
4. T.J. McArdle, J.O. Chu, Y. Zhu, Z. Liu, M. Krishnan, C.M. Breslin, C. Dimitrakopoulos, R. Wisnieff, and A. Grill Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates Appl. Phys. Lett. 98 2011 132108 http://scitation.aip.org/content/aip/journal/apl/98/13/10.1063/1.3575202
5. A. Kubota, M. Yoshimura, S. Fukuyama, C. Iwamoto, and M. Touge Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution Precis. Eng. 36 2012 137 140 http://www.sciencedirect.com/science/article/pii/S0141635911001371
6. G. Wagner, J. Doerschel, and A. Gerlitzke Surface preparation of 4H-SiC substrates for hot-wall CVD of SiC layers Appl. Surf. Sci. 184 2001 55 59 http://www.sciencedirect.com/science/article/pii/S0169433201004779
7. H. Deng, and K. Yamamura Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing CIRP Ann. Manuf. Technol. 62 2013 575 578 http://www.sciencedirect.com/science/article/pii/S0007850613000292
8. H. Deng, K. Endo, and K. Yamamura Atomic-scale planarization of 4H-SiC (0 0 0 1) by combination of thermal oxidation and abrasive polishing Appl. Phys. Lett. 103 2013 111603 http://scitation.aip.org/content/aip/journal/apl/103/11/10.1063/1.4821068
9. C.R. Miskys, M.K. Kelly, O. Ambacher, G. Martinez-Criado, and M. Stutzmann GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates Appl. Phys. Lett. 77 2000 1858 http://scitation.aip.org/content/aip/journal/apl/77/12/10.1063/1.1311596
10. S. Hayashi, T. Koga, and M.S. Goorsky Chemical mechanical polishing of GaN J. Electrochem. Soc. 155 2008 H113 H116 http://jes.ecsdl.org/content/155/2/H113.full.pdf+html?sid=8fed347d-802a-45cd-b6b8-55cc0682ff03
11. H. Yan, X. Xiu, Z. Liu, R. Zhang, X. Hua, Z. Xie, P. Han, Y. Shi, and Y. Zheng Chemical mechanical polishing of freestanding GaN substrates J. Semicond. 30 2009 (023003-1-023003-4) http://www.cnki.com.cn/Article/CJFDTotal-BDTX200902007.htm
12. H. Aida, H. Takeda, K. Koyama, H. Katakura, K. Sunakawa, and T. Doi Chemical mechanical polishing of gallium nitride with colloidal silica J. Electrochem. Soc. 158 2011 H1206 H1212 http://jes.ecsdl.org/content/158/12/H1206.full.pdf+html?sid=e0be0227-52ef-4e42-a1dd-75cd5636a111
13. H. Aida, T. Doi, H. Takeda, H. Katakura, S.W. Kim, K. Koyama, T. Yamazaki, and M. Uneda Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials Curr. Appl. Phys. 12 2012 S41 S46 http://www.sciencedirect.com/science/article/pii/S1567173912000454
14. D. Hanser, M. Tutor, E. Preble, M. Williams, X. Xu, D. Tsvetkov, and L. Liu Surface preparation of substrates from bulk GaN crystals J. Cryst. Growth 305 2007 372 376 http://www.sciencedirect.com/science/article/pii/S0022024807003685
15. J. Murata, T. Okamoto, S. Sadakuni, A.N. Hattori, K. Yagi, Y. Sano, K. Arima, and K. Yamauchi Atomically smooth gallium nitride surfaces prepared by chemical etching with platinum catalyst in water J. Electrochem. Soc. 159 2012 H417 H420 http://jes.ecsdl.org/content/159/4/H417
16. X. Xu, R.P. Vaudo, and G.R. Brandes Fabrication of GaN wafers for electronic and optoelectronic devices Opt. Mater. 23 2003 1 5 http://www.sciencedirect.com/science/article/pii/S092534670300051X
17. X. Shi, G. Pan, Y. Zhou, Z. Gu, H. Gong, and C. Zou Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0 0 0 1) Appl. Surf. Sci. 307 2014 414 427 http://www.sciencedirect.com/science/article/pii/S0169433214008125
18. X. Xu, R.P. Vaudo, G.R. Brandes, J. Bai, P.I. Gouma, and M. Dudley Chemical mechanical polishing for decoration and measurement of dislocations on freestanding GaN wafers Phys. Stat. Sol. 7 2003 2460 2463 http://onlinelibrary.wiley.com/doi/10.1002/pssc.200303501/citedby
19. P. Kumar, S. Rao, J. Lee, D. Singh, and R.K. Singh Accurate determination of dislocation density in GaN using chemical mechanical polishing ECS J. Solid State Sci. Technol. 2 2013 P1 P4 http://jss.ecsdl.org/content/2/1/P1
20. C. Zou, G. Pan, X. shi, H. Gong, and Y. Zhou Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives P. I. Mech. Eng. J. J. Eng. 228 2014 1144 1150 http://pij.sagepub.com/content/228/10/1144.full.pdf+html
21. L. Zhang, Y. Shao, Y. Wu, X. Hao, X. Chen, S. Qu, and X. Xu Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods J. Alloys Compd. 504 2010 186 191 http://www.sciencedirect.com/science/article/pii/S0925838810012673
22. Fenton's reagent revisited Acc. Chem. Res. 8 1975 125 131 http://pubs.acs.org/doi/abs/10.1021/ar50088a003
23. Y.J. Kim, O.J. Kwon, M.C. Kang, M.W. Suh, Y. Im, and J.J. Kim Development of a copper chemical mechanical polishing slurry at neutral pH based on ceria slurry semiconductor devices, materials, and processing J. Electrochem. Soc. 157 2010 H952 H958 http://jes.ecsdl.org/content/157/10/H952.full.pdf+html?sid=85df0e74-e45f-4697-8f96-7460bc22c804
24. H. Takamatsu, A. Onishi, K. Takahashi, and N. Shimizu Sonocatalytic-Fenton reaction for enhanced OH radical generation and its application to lignin degradation Ultrason. Sonochem. 20 2013 1092 1097 http://www.sciencedirect.com/science/article/pii/S1350417713000345
25. K.F. Reardon Fenton's oxidation of pentachlorophenol Water Res. 43 2009 1831 1840 http://www.sciencedirect.com/science/article/pii/S0043135409000517