All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron

IEEE Transactions on Biomedical Circuits and Systems

Volumn 10, Issue 4, 2016, Pages 828-836

  Zhang, Deming ^a   Zeng, Lang ^a   Cao, Kaihua ^a   Wang, Mengxing ^a   Peng, Shouzhong ^a   Zhang, Yue ^a   Zhang, Youguang ^a   Klein, Jacques Olivier ^b   Wang, Yu ^c   Zhao, Weisheng ^a  

^a BEIHANG UNIVERSITY   (China)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

All Spin Artificial Neural Network (ASANN); artificial synaptic device; compound spintronic device; magnetic tunnel junction (MTJ); post CMOS non volatile memory (NVM) technologies; resistive RAM (RRAM)

Indexed keywords

CHARACTER RECOGNITION; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; ELECTROSPINNING; MAGNETIC DEVICES; MAGNETIC MOMENTS; MAGNETOELECTRONICS; RANDOM ACCESS STORAGE; RECONFIGURABLE HARDWARE; RRAM; TUNNEL JUNCTIONS;

DIGITAL RECOGNITION; LOW-POWER DISSIPATION; MAGNETIC TUNNEL JUNCTION; MATERIALS ENGINEERING; NEUROMORPHIC COMPUTING; NON-VOLATILE MEMORY TECHNOLOGY; RESISTIVE RAMS (RRAM); SYSTEM LEVEL SIMULATION;

NEURAL NETWORKS;

ARTIFICIAL NEURAL NETWORK; CHEMISTRY; MAGNETISM; MEMORY; NERVE CELL; SEMICONDUCTOR; SYNAPSE;

MAGNETICS; MEMORY; NEURAL NETWORKS (COMPUTER); NEURONS; SEMICONDUCTORS; SYNAPSES;

EID: 84969548960     PISSN: 19324545     EISSN: None     Source Type: Journal    
DOI: 10.1109/TBCAS.2016.2533798     Document Type: Article

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