Uniform, large-area self-limiting layer synthesis of tungsten diselenide

2D Materials

Volumn 3, Issue 1, 2016, Pages

  Park, Kyunam ^a   Kim, Youngjun ^a   Song, Jeong Gyu ^a   Kim, Seok Jin ^a   Wanlee, Chang ^a   Ryu, Gyeong Hee ^b   Lee, Zonghoon ^b   Park, Jusang ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

Author keywords

Atomic layer deposition; Physical adsorption; Transition metal dichalcogenide; Tungsten diselenide; Two dimensional material

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; METAL TESTING; OPTOELECTRONIC DEVICES; SILICA; SUBSTRATES; TRANSITION METALS; TUNGSTEN COMPOUNDS;

DEVICE APPLICATION; FIELD EFFECTS; MICROMETER SCALE; P-TYPE BEHAVIORS; PHYSICAL ADSORPTION; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; TWO-DIMENSIONAL MATERIALS;

SELENIUM COMPOUNDS;

EID: 84964403038     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/3/1/014004     Document Type: Article

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