The effect of Na on the electronic properties of Cu(In,Ga)Se2 thin films: A local-probe study

Physica Status Solidi - Rapid Research Letters

Volumn 10, Issue 6, 2016, Pages 448-452

  Azulay, D ^a,b   Abou Ras, D ^c   Popov, I ^a   Balberg, I ^a   Millo, O ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b Azrieli College of Engineering   (Israel)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

Cu(In,Ga)Se2; electronic properties; grain boundaries; scanning tunneling spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; GALLIUM; GRAIN BOUNDARIES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; THIN FILMS;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CU (IN ,GA)SE; DEEP-LEVEL DEFECTS; PHOTOGENERATED CARRIERS; RECOMBINATION RATE; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SCANNING TUNNELING SPECTROSCOPY; VACANCY-RELATED DEFECTS;

ELECTRONIC PROPERTIES;

EID: 84964319027     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201600058     Document Type: Article

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