Na-induced variations in the structural, optical, and electrical properties of Cu (In,Ga) Se2 thin films

Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

  Ishizuka, Shogo ^a   Yamada, Akimasa ^a   Islam, Muhammad Monirul ^b   Shibata, Hajime ^a   Fons, Paul ^a   Sakurai, Takeaki ^b   Akimoto, Katsuhiro ^b   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ENERGY; ALKALI-SILICATE GLASS; BAND GAP ENERGY; CIGS FILMS; COMPOSITION GRADIENT; CU(IN , GA)SE; ELECTRICAL PROPERTY; GRAIN SIZE; NA CONCENTRATION; NA DOPING; P-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE SPECTRUM; POLYCRYSTALLINE; PRECISE CONTROL; SYSTEMATIC VARIATION; THIN LAYERS;

GALLIUM; GRAIN SIZE AND SHAPE; LIGHT TRANSMISSION; OPTICAL PROPERTIES; POINT DEFECTS; SEMICONDUCTING SELENIUM COMPOUNDS; SILICATES; SODIUM; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 69149102525     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3190528     Document Type: Article

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