Scanning microscopy of higher harmonic capacitance response for Si device

Extended Abstracts of the 2nd International Workshop on Junction Technology, IWJT 2001

Volumn , Issue , 2001, Pages 49-52

  Naitou, Y ^a   Ookubo, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HARMONIC ANALYSIS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

CAPACITANCE RESPONSE; CHARACTERISTIC PEAKS; DEPLETION LAYER; HARMONIC RESPONSE; HIGHER HARMONICS; METAL OXIDE SEMICONDUCTOR; SCANNING CAPACITANCE MICROSCOPY; SCANNING MICROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 84963781996     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2001.993824     Document Type: Conference Paper

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