Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Nature Nanotechnology

Volumn 11, Issue 7, 2016, Pages 598-602

  Ye, Yu ^a   Xiao, Jun ^a   Wang, Hailong ^b   Ye, Ziliang ^a   Zhu, Hanyu ^a   Zhao, Mervin ^a   Wang, Yuan ^a   Zhao, Jianhua ^b   Yin, Xiaobo ^c   Zhang, Xiang ^a,d,e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c University of Colorado at Boulder   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); LOCKS (FASTENERS); MAGNETIC SEMICONDUCTORS; MONOLAYERS; MRAM DEVICES; POLARIZATION; RANDOM ACCESS STORAGE; TRANSITION METALS;

CARRIER DISTRIBUTIONS; DILUTED FERROMAGNETIC SEMICONDUCTORS; ELECTRICAL GENERATION; ELECTRONIC DEVICE; INFORMATION PROCESS; NEW DIMENSIONS; SPIN INJECTION; TRANSITION METAL DICHALCOGENIDES;

LANDFORMS;

TRANSITION ELEMENT;

ACCELERATION; ARTICLE; CRYSTAL; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRONICS; INFORMATION PROCESSING; LUMINESCENCE; MAGNETIC FIELD; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84962106152     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2016.49     Document Type: Article

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