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Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 5, 2008, Pages

Enhanced annealing, high Curie temperature, and low-voltage gating in (Ga,Mn)As: A surface oxide control study

(7) Olejnik K a Owen, M H S b,c Novak V a Masek J a Irvine, A C c Wunderlich, J a,b Jungwirth, T a,d

a INSTITUTE OF PHYSICS (Czech Republic)

b HITACHI CAMBRIDGE LABORATORY (United Kingdom)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

d UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49249126127 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.78.054403 Document Type: Article

Times cited : (107)

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