Very high performance 40nm CMOS with ultra-thin nitride/oxynitride stack gate dielectric and pre-doped dual poly-Si gate electrodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 860-862

  Xiang, Q ^a   Jeon, J ^a   Sachdey, P ^a   Yu, B ^a   Saraswat, K C ^a   Lin, M R ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; FABRICATION; NITRIDES; POLYSILICON; THIN FILMS;

EQUIVALENT OXIDE THICKNESS (EOT);

CMOS INTEGRATED CIRCUITS;

EID: 0034446314     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)