Epitaxial growth of vertically free-standing ultra-thin silicon nanowires

Nanotechnology

Volumn 26, Issue 7, 2015, Pages

  Zhou, Qingwei ^a   Liu, Liwei ^a   Gao, Xingsen ^a   Chen, Lijun ^b   Senz, Stephan ^b   Zhang, Zhang ^a,b   Liu, Junming ^c  

^a South China Academy of Advanced Optoelectronics Center for Optics and Electromagnetic Research   (China)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c NANJING UNIVERSITY   (China)

Author keywords

epitaxial growth; nucleation; Si nanowires; ultrathin

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; NANOWIRES; NUCLEATION; SILICON; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH DIRECTIONS; SI NANOWIRE; SI(110) SUBSTRATE; SILICON NANOWIRES; ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION; ULTRA-THIN; ULTRATHIN SILICON; [110] DIRECTION;

SUBSTRATES;

EID: 84961308080     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/7/075707     Document Type: Article

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