Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals

Nano Letters

Volumn 16, Issue 3, 2016, Pages 2061-2065

  Yoshida, Masaro ^a   Iizuka, Takahiko ^a   Saito, Yu ^a   Onga, Masaru ^a   Suzuki, Ryuji ^a   Zhang, Yijin ^a   Iwasa, Yoshihiro ^a,b   Shimizu, Sunao ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

electric double layer transistor (EDLT); on chip thermometer; thermoelectric power factor; Thermopower; tungsten diselenide (WSe2)

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRIC POWER FACTOR; ELECTROCHEMISTRY; SELENIUM COMPOUNDS; SINGLE CRYSTALS;

CHEMICAL COMPOSITIONS; ELECTRIC DOUBLE LAYER; ELECTRIC DOUBLE-LAYER TRANSISTORS; ELECTROSTATIC DOPING; ON CHIPS; POWER FACTORS; THERMOELECTRIC POWER FACTORS; TUNGSTEN DISELENIDE;

THERMOELECTRIC POWER;

EID: 84960473787     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.6b00075     Document Type: Article

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