Control of thermoelectric properties of ZnO using electric double-layer transistor structure

Japanese Journal of Applied Physics

Volumn 53, Issue 11, 2014, Pages

  Takayanagi, Ryohei ^a   Fujii, Takenori ^a   Asamitsu, Atsushi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROCHEMISTRY; ELECTROLYTES; FIELD EFFECT TRANSISTORS; TEMPERATURE DISTRIBUTION; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY; THRESHOLD VOLTAGE; ZINC OXIDE;

ELECTRIC DOUBLE-LAYER TRANSISTORS; ELECTROLYTE SOLUTIONS; GATE VOLTAGES; METALLIC LAYERS; ORDERS OF MAGNITUDE; POWER FACTORS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES;

CARRIER CONCENTRATION;

EID: 84909957439     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.111101     Document Type: Article

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