Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure

ACS Applied Materials and Interfaces

Volumn 8, Issue 4, 2016, Pages 2533-2539

  Yang, Shengxue ^a   Wang, Cong ^b,c   Ataca, Can ^d   Li, Yan ^e   Chen, Hui ^e   Cai, Hui ^f   Suslu, Aslihan ^f   Grossman, Jeffrey C ^d   Jiang, Chengbao ^a   Liu, Qian ^b,c   Tongay, Sefaattin ^f  

^a BEIHANG UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

^c NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^d Massachusetts Institute of Technology   (United States)

^e INSTITUTE OF SEMICONDUCTORS   (China)

^f Arizona State University   (United States)

Author keywords

ambipolar behavior; dissimilar material systems; p n heterojunction; rectification; self driven photocurrent

Indexed keywords

CHARGE TRANSFER; CRYSTAL SYMMETRY; DISSIMILAR MATERIALS; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS; RECONFIGURABLE HARDWARE; SEMICONDUCTOR QUANTUM WELLS; VAN DER WAALS FORCES;

AMBIPOLAR BEHAVIOR; DISSIMILAR MATERIAL SYSTEMS; P-N HETEROJUNCTIONS; RECTIFICATION; SELF-DRIVEN;

INTERFACES (MATERIALS);

EID: 84958206191     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b10001     Document Type: Article

References (45)

1. 2 Hybrid Technology for Large-Scale Two-Dimensional Electronics Nano Lett. 2014, 14, 3055-3063 10.1021/nl404795z
2. Duan, X.; Wang, C.; Shaw, J. C.; Cheng, R.; Chen, Y.; Li, H.; Wu, X.; Tang, Y.; Zhang, Q.; Pan, A.; Jiang, J.; Yu, R.; Huang, Y.; Duan, X. Lateral Epitaxial Growth of Two-dimensional Layered Semiconductor Heterojunctions Nat. Nanotechnol. 2014, 9 (12) 1024-1030 10.1038/nnano.2014.222
3. Geim, A. K.; Grigorieva, I. V. Van Der Waals Heterostructures Nature 2013, 499, 419-425 10.1038/nature12385
4. 2 2D Heterostructures Nano Lett. 2013, 13 (11) 5485-5490 10.1021/nl4030648
5. Roy, T.; Tosun, M.; Kang, J. S.; Sachid, A. B.; Desai, S. B.; Hettick, M.; Hu, C. C.; Javey, A. Field-Effect Transistors Built from All Two-Dimensional Material Components ACS Nano 2014, 8 (6) 6259-6264 10.1021/nn501723y
6. 2 Heterojunction p-n Diodes Nano Lett. 2014, 14, 5590-5597 10.1021/nl502075n
7. Lee, C.; Lee, G.; van der Zande, A. M.; Chen, W.; Li, Y.; Han, M.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F.; Guo, J.; Hone, J.; Kim, P. Atomically Thin p-n Junctions with Van Der Waals Heterointerfaces Nat. Nanotechnol. 2014, 9 (9) 676-681 10.1038/nnano.2014.150
8. 2 Hybrid Structures for Multifunctional Photoresponsive Memory Devices Nat. Nanotechnol. 2013, 8, 826-830 10.1038/nnano.2013.206
9. Choi, M. S.; Lee, G.; Yu, Y.; Lee, D.; Lee, S. H.; Kim, P.; Hone, J.; Yoo, W. J. Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices Nat. Commun. 2013, 4, 1624 10.1038/ncomms2652
10. Yu, W. J.; Li, Z.; Zhou, H.; Chen, Y.; Wang, Y.; Huang, Y.; Duan, X. Vertically Stacked Multi-heterostructures of Layered Materials for Logic Transistors and Complementary Inverters Nat. Mater. 2013, 12, 246-252 10.1038/nmat3518
11. Leven, I.; Krepel, D.; Shemesh, O.; Hod, O. Robust Superlubricity in Graphene/h-BN Heterojunctions J. Phys. Chem. Lett. 2013, 4, 115-120 10.1021/jz301758c
12. Wang, Z.; Xu, K.; Li, Y.; Zhan, X.; Safdar, M.; Wang, Q.; Wang, F.; He, J. Role of Ga Vacancy on a Multilayer GaTe Phototransistor ACS Nano 2014, 8 (5) 4859-4865 10.1021/nn500782n
13. Yu, W. J.; Liu, Y.; Zhou, H.; Yin, A.; Li, Z.; Huang, Y.; Duan, X. Highly Efficient Gate-Tunable Photocurrent Generation in Vertical Heterostructures of Layered Materials Nat. Nanotechnol. 2013, 8, 952-958 10.1038/nnano.2013.219
14. 2 Ternary Nanojunction with Enhanced Photoelectrochemical Activity Adv. Mater. 2013, 25, 6291-6297 10.1002/adma.201303116
15. 2 Heterostructures Nat. Nanotechnol. 2014, 9, 682-686 10.1038/nnano.2014.167
16. Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K. E.; Kim, P.; Yoo, I.; Chung, H. J.; Kim, K. Graphene Barristors, a Triode Device with a Gate-controlled Schottky Barrier Science 2012, 336, 1140-1143 10.1126/science.1220527
17. 2 van der Waals Heterojunction p-n Diode ACS Nano 2014, 8, 8292-8299 10.1021/nn5027388
18. 2 Semiconductors Nat. Mater. 2014, 13 (12) 1096-1101 10.1038/nmat4064
19. Kang, J.; Tongay, S.; Zhou, J.; Li, J. B.; Wu, J. Q. Band Offsets and Heterostructures of Two-dimensional Semiconductors Appl. Phys. Lett. 2013, 102, 012111 10.1063/1.4774090
20. 2 Monolayers Nano Lett. 2014, 14, 3185-3190 10.1021/nl500515q
21. Shi, S. F.; Wang, F. Atomically Thin P-N Junctions Nat. Nanotechnol. 2014, 9, 664-665 10.1038/nnano.2014.186
22. Grundmann, M.; Karsthof, R.; von Wenckstern, H. Interface Recombination Current in Type II Heterostructure Bipolar Diodes ACS Appl. Mater. Interfaces 2014, 6, 14785-14789 10.1021/am504454g
23. Furchi, M. M.; Pospischil, A.; Libisch, F.; Burgdörfer, J.; Mueller, T. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction Nano Lett. 2014, 14, 4785-4791 10.1021/nl501962c
24. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
25. Liu, F.; Shimotani, H.; Shang, H.; Kanagasekaran, T.; Zolyomi, V.; Drummond, N.; Falko, V. I.; Tanigaki, K. High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes ACS Nano 2014, 8, 752-760 10.1021/nn4054039
26. Ma, Z.; Hu, Z.; Zhao, X.; Tang, Q.; Wu, D.; Zhou, Z.; Zhang, L. Tunable Band Structures of Heterostructured Bilayers with Transition-Metal Dichalcogenide and MXene Monolayer J. Phys. Chem. C 2014, 118, 5593-5599 10.1021/jp500861n
27. 2 Nanosheet Transistors Nanoscale 2014, 6, 7226-7231 10.1039/c4nr01741b
28. 2 Nano Lett. 2011, 11, 5111-5116 10.1021/nl201874w
29. Buscema, M.; Groenendijk, D. J.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Photovoltaic Effect in Few-layer Black Phosphorus PN Junctions Defined by Local Electrostatic Gating Nat. Commun. 2014, 5, 4651 10.1038/ncomms5651
30. 2 Heterojunctions Small 2015, 11, 5430-5438 10.1002/smll.201501206
31. Yang, S.; Li, Y.; Wang, X.; Huo, N.; Xia, J.; Li, S.; Li, J. High Performance Few-layer GaS Photodetector and Its Unique Photo-response in Different Gas Environments Nanoscale 2014, 6, 2582 10.1039/c3nr05965k
32. 2 Heterojunction P-N Diode Proc. Natl. Acad. Sci. U. S. A. 2013, 110, 18076-18080 10.1073/pnas.1317226110
33. Wang, Q.; Safdar, M.; Xu, K.; Mirza, M.; Wang, Z.; He, J. Van der Waals Epitaxy and Photoresponse of Hexagonal Tellurium Nanoplates on Flexible Mica Sheets ACS Nano 2014, 8, 7497-7505 10.1021/nn5028104
34. 2 Nanowire Ultraviolet Photodetectors Small 2011, 7, 1012-1017 10.1002/smll.201002379
35. Li, L.; Wu, P.; Fang, X. S.; Zhai, T. Y.; Dai, L.; Liao, M. Y.; Koide, Y.; Wang, H. Q.; Bando, Y.; Golberg, D. Single-crystalline CdS Nanobelts for Excellent Field-emitters and Ultrahigh Quantum-efficiency Photodetectors Adv. Mater. 2010, 22, 3161 10.1002/adma.201000144
36. 7 Nanobelts Adv. Mater. 2010, 22, 5145 10.1002/adma.201002608
37. Hu, P.; Wen, Z.; Wang, L.; Tan, P.; Xiao, K. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors ACS Nano 2012, 6, 5988-5994 10.1021/nn300889c
38. 2 Nanobelts Adv. Mater. 2010, 22, 4151 10.1002/adma.201001413
39. 3 Nanostructures with Enhanced Electrical and Photoelectrical Performances via Sulfur Doping J. Mater. Chem. 2010, 20, 6630 10.1039/c0jm01013h
40. Hu, P.; Wang, L.; Yoon, M.; Zhang, J.; Feng, W.; Wang, X.; Wen, Z.; Idrobo, J. C.; Miyamoto, Y.; Geohegan, D. B.; Xiao, K. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates Nano Lett. 2013, 13, 1649-1654 10.1021/nl400107k
41. 2 Nanoribbon Nanosensors at Room Temperature Angew. Chem., Int. Ed. 2002, 41, 2405 10.1002/1521-3773(20020703)41:13<2405::AID-ANIE2405>3.0.CO;2-3
42. Lopez-Sanchez, O.; Llado, E. A.; Koman, V.; Morral, A. F.; Radenovic, A.; Kis, A. Light Generation and Harvesting in a van der Waals Heterostructure ACS Nano 2014, 8, 3042-3048 10.1021/nn500480u
43. 2 van der Waals p-n Junctions with Novel Optoelectronic Performance Nano Lett. 2015, 15, 7558-7566 10.1021/acs.nanolett.5b03291
44. 2 Nat. Nanotechnol. 2013, 8, 497-501 10.1038/nnano.2013.100
45. 2 Nano Lett. 2014, 14, 6165-6170 10.1021/nl502339q