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Volumn 8, Issue 5, 2016, Pages 2594-2600

A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment

(19) Wu, Zefei a Guo, Yanqing b Guo, Yuzheng c Huang, Rui b,c Xu, Shuigang a Song, Jie b Lu, Huanhuan a Lin, Zhenxu b Han, Yu a Li, Hongliang b Han, Tianyi a Lin, Jiangxiazi a Wu, Yingying a Long, Gen a Cai, Yuan a Cheng, Chun d Su, Dangsheng e Robertson, John c Wang, Ning a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b HANSHAN NORMAL UNIVERSITY (China)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

d SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

e INSTITUTE OF METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FILM GROWTH; HEAT TREATMENT; MONOLAYERS; SUBSTRATES;

CARBON DISSOLUTION; DIELECTRIC SUBSTRATES; HIGH CARRIER MOBILITY; INSULATING SUBSTRATES; LARGE-AREA GRAPHENE; QUANTUM OSCILLATIONS; RAPID THERMAL TREATMENT; SOLID CARBON SOURCES;

GRAPHENE;

EID: 84956852244 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr05393e Document Type: Article

Times cited : (25)

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