Direct growth of doping-density-controlled hexagonal graphene on SiO 2 substrate by rapid-heating plasma CVD

ACS Nano

Volumn 6, Issue 10, 2012, Pages 8508-8515

  Kato, Toshiaki ^a   Hatakeyama, Rikizo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

carrier doping; direct growth; graphene sheet; plasma CVD

Indexed keywords

CARRIER DOPING; DIRECT GROWTH; ELECTRICAL TRANSPORT; GAS CONCENTRATION; GRAPHENE GROWTH; GRAPHENE SHEETS; HIGH QUALITY; NI FILMS; PLASMA CHEMICAL VAPOR DEPOSITION; RAPID-HEATING; SINGLE LAYER; SYSTEMATIC INVESTIGATIONS;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; PLASMA CVD; SEMICONDUCTOR DOPING;

GRAPHENE;

GRAPHITE; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; PLASMA GAS; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; PLASMA GASES; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 84867792532     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn302290z     Document Type: Article

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