Gate-induced superconductivity in atomically thin MoS 2 crystals

Nature Nanotechnology

Volumn 11, Issue 4, 2016, Pages 339-344

  Costanzo, Davide ^a   Jo, Sanghyun ^a   Berger, Helmuth ^b   Morpurgo, Alberto F ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; MONOLAYERS; SUPERCONDUCTING DEVICES; VAN DER WAALS FORCES;

CRITICAL TEMPERATURES; EXFOLIATED CRYSTALS; MICROSCOPIC MECHANISMS; MULTI-LAYER DEVICES; SINGLE PARTICLE; SUPERCONDUCTING PROPERTIES; SUPERCONDUCTING STATE; THICKNESS DEPENDENCE;

MULTILAYERS;

DISULFIDE; IONIC LIQUID; MOLYBDENUM; MOLYBDENUM DISULFIDE; UNCLASSIFIED DRUG;

ARTICLE; CRYSTAL; ELECTRIC CONDUCTIVITY; ELECTRON; GATE INDUCED SUPERCONDUCTIVITY; MICROSCOPY; PRIORITY JOURNAL; SUPERCONDUCTOR; TEMPERATURE; TEMPERATURE DEPENDENCE; THICKNESS;

EID: 84954514391     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.314     Document Type: Article

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