High aspect ratio Si micro-holes formed by wet etching using Pt needles

Materials Research Express

Volumn 2, Issue 7, 2015, Pages

  Imamura, Kentaro ^a   Akai, Tomoki ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

High aspect ratio; Micro fabrication; Micro holes; Silicon; Wet etching

Indexed keywords

ASPECT RATIO; CATALYST ACTIVITY; DISSOLUTION; HYDROFLUORIC ACID; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NEEDLES; PLATINUM; REDOX REACTIONS; SILICON; WET ETCHING;

DISSOLUTION REACTIONS; HIGH ASPECT RATIO; HIGH-RESOLUTION TEM; MICRO HOLES; NANOCRYSTALLINE SI; NONCONTACT REGIONS; REDOX POTENTIALS; SI SUBSTRATES;

SILICON WAFERS;

EID: 84954478301     PISSN: None     EISSN: 20531591     Source Type: Journal    
DOI: 10.1088/2053-1591/2/7/075901     Document Type: Article

References (14)

1. Rangelow IW 1997 Reactive ion etching for high aspect ratio silicon micromachining Surf. Coat. Technol. 97 140-50
2. Sokmen U, Stranz A, Fundling S, Wehmann H-H, Bandalo V, Bora A, Tornow M, Waag A and Peiner E 2009 Capabilities of ICP-RIE cryogenic dryetching of silicon: review of exemplary microstructures J. Micromech. Microeng. 19 105005
3. McAuley SA, Ashraf H, Atabo L, Chambers A, Hall S, Hopkins J and Nicholls G 2001 Silicon micromachining using a high-density plasma source J. Phys. D 34 2769-74
4. Laemer F and Schilp A 1996 U.S.Patent 5501893
5. Pal P and Sato K 2009 Complex three-dimensional structures in Si (100) using wet bulk micromachining J. Micromech. Microeng. 19 105008
6. Zubel I and Kramkowska M 2001 The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions Sens. Actuators, A 93 138-47
7. Lee CL, Tsujino K, Kanda Y, Ikeda S and Matsumura M 2008 Pore formation in silicon by wet etching using micrometer-sized metal particles as catalysts J. Mater. Chem. 18 1015-20
8. Tsujino K and Matsumura M 2005 Boring deep cylindrical nanoholes in silicon using nanoparticles as a catalyst Adv. Mater. 17 1045-7
9. Chartier C, Bastide S and Levy-Clement C 2008 Metal-assisted chemical etching of silicon in HF-H2O2 Electrochim. Acta 53 5509-16
10. Imamura K, Franco F C, Matsumoto T and Kobayashi H 2013 Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method Appl. Phys. Lett. 103 013110
11. Takahashi M, Fukushima T, Seino Y, Kim W B, Imamura K and Kobayashi H 2013 Surface structure chemical transfer method for formation of ultralow reflectivity Si surfaces J. Electrochem. Soc. 160 H443-5
12. Fukushima T, Ohnaka A, Takahashi M and Kobayashi H 2011 Fabrication of low reflectivity poly-crystalline Si surfaces by structure transfer method Electrochem. Solid State Lett. 14 B13-5
13. Del Alamo J and Swanson R 1987 Modelingof minority carrier transport in heavily doped silicon emitters Solid State Electron. 30 1127-36
14. Malshe A P, Rajurkar K P, Virwani K R, Taylor C R, Bourell D L, Levy G, Sundaram M M, McGeough J A, Kalyanasundaram V and Samant A N 2010 Tip-based nanomanufacturing by electrical, chemical, mechanical and thermal processes CIRPAnn 59 628-51