Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method

Applied Physics Letters

Volumn 103, Issue 1, 2013, Pages

  Imamura, Kentaro ^a   Franco, Francisco C ^a   Matsumoto, Taketoshi ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; ENERGY GAP; HYDROFLUORIC ACID; NANOCRYSTALS; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; SURFACE STRUCTURE;

ACID SOLUTIONS; CHEMICAL TRANSFER; NANOCRYSTALLINE SI; PEAK MAXIMA; POLYCRYSTALLINE-SI; SI LAYER; SI SURFACES; SI WAFER; SILICON SURFACES; TRANSFER METHOD;

REFLECTION;

EID: 84880309972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813089     Document Type: Article

References (16)

1. F. Restrepo and C. E. Backus, IEEE Trans. Electron Devices 23, 1195 (1976). 10.1109/T-ED.1976.18576
2. A. M. Jeffery, Solar Cells: An Introduction of Crystalline Photovoltaic Technology (Kluwer Academic Publishers, Dordrecht, 1997), p. 137.
3. S. Kwon, J. Yi, S. Yoon, J. S. Lee, and D. Kim, Curr. Appl. Phys. 9, 1310 (2009). 10.1016/j.cap.2008.12.014
4. Y.-T. Cheng, J.-J. Ho, S.-Y. Tsai, Z.-Z. Ye, W. Lee, D.-S. Hwang, S.-H. Chang, C.-C. Chang, and K. L. Wang, Sol. Energy 85, 87 (2011). 10.1016/j.solener.2010.10.020
5. C. Chartier, S. Bastide, and C. Lévy-Clément, Electrochim. Acta 53, 5509 (2008). 10.1016/j.electacta.2008.03.009
6. S. Yae, T. Kobayashi, T. Kawagishi, N. Fukumuro, and H. Matsuda, Sol. Energy 80, 701 (2006). 10.1016/j.solener.2005.10.011
7. T. Fukushima, A. Ohnaka, M. Takahashi, and H. Kobayashi, Electrochem. Solid-State Lett. 14, B13-B15 (2011). 10.1149/1.3515990
8. C.-Y. Lin, Y.-K. Fang, S.-F. Chen, S.-H. Chang, and T.-H. Chou, Mater. Sci. Eng., B 134, 99 (2006). 10.1016/j.mseb.2006.07.040
9. I. Umezu, T. Kimura, and A. Sugimura, Physica B 376-377, 853 (2006). 10.1016/j.physb.2005.12.213
10. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, Appl. Phys. Lett. 80, 4834 (2002). 10.1063/1.1485302
11. R. Guerra, F. Cigarini, and S. Ossicini, J. Appl. Phys. 113, 143505 (2013). 10.1063/1.4799394
12. A. Benilov, I. Gavrilchenko, I. Benilova, V. Skryshevsky, and M. Cabrera, Sens. Actuators, A 137, 345 (2007). 10.1016/j.sna.2007.02.032
13. J.-C. Lin, W.-C. Tsai, and P.-W. Lee, Electrochem. Commun. 9, 449 (2007). 10.1016/j.elecom.2006.10.001
14. C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, J. Appl. Phys. 101, 103112 (2007). 10.1063/1.2720095
15. L. Bagolini, A. Mattoni, and L. Colombo, Appl. Phys. Lett. 94, 053115 (2009). 10.1063/1.3078281
16. D. Cavalcoli, M. Rossi, and A. Cavallini, J. Appl. Phys. 109, 053719 (2011). 10.1063/1.3553583