Enabling high-performance LPDDRx-compatible MRAM

Proceedings of the International Symposium on Low Power Electronics and Design

Volumn 2015-October, Issue , 2015, Pages 339-344

  Wang, Jue ^a   Dong, Xiangyu ^b   Xie, Yuan ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b QUALCOMM INC   (United States)

Author keywords

LPDDR; MRAM; spin transfer torque

Indexed keywords

DATA STORAGE EQUIPMENT; DESIGN; DIGITAL STORAGE; DYNAMIC RANDOM ACCESS STORAGE; ENERGY EFFICIENCY; INTEGRATED CIRCUIT DESIGN; LOW POWER ELECTRONICS; MAGNETIC RECORDING; MAGNETIC STORAGE; POWER ELECTRONICS;

EMERGING NON-VOLATILE MEMORY; INTERFACE PROTOCOL; LPDDR; MAGNETORESISTIVE MEMORY; MOBILE COMPUTING DEVICES; MRAM; PERFORMANCE ISSUES; SPIN TRANSFER TORQUE;

MRAM DEVICES;

EID: 84953381765     PISSN: 15334678     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/2627369.2627610     Document Type: Conference Paper

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