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Volumn , Issue , 2009, Pages 24-33

Scalable high performance main memory system using phase-change memory technology

Author keywords

Dram caching; Endurance; Phase change memory; Wear leveling

Indexed keywords

BASELINE SYSTEMS; ENDURANCE; HYBRID MEMORIES; IN-PHASE; LEVEL MODEL; MAIN MEMORY; MEMORY SUBSYSTEMS; MEMORY TECHNOLOGY; PHASE-CHANGE MEMORY TECHNOLOGIES; POWER BUDGETS; POWER CONSTRAINTS; WEAR LEVELING;

EID: 70450273507     PISSN: 10636897     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1555754.1555760     Document Type: Conference Paper
Times cited : (1296)

References (28)
  • 2
    • 70450241937 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, ITRS
    • International Technology Roadmap for Semiconductors, ITRS 2007.
    • (2007)
  • 3
    • 70450226487 scopus 로고    scopus 로고
    • Apple Computer Inc
    • Apple Computer Inc. Apple Products. http://www.apple.com.
    • Apple Products
  • 5
    • 70450251221 scopus 로고    scopus 로고
    • E. Doller. Flash Memory Trends and Technologies. Intel Developer Forum, 2006.
    • E. Doller. Flash Memory Trends and Technologies. Intel Developer Forum, 2006.
  • 6
    • 0042855807 scopus 로고    scopus 로고
    • Technological impact of magnetic hard disk drives on storage systems
    • E. Grochowski and R. Halem. Technological impact of magnetic hard disk drives on storage systems. IBM Systems. Journal, 42(2):338-346, 2003.
    • (2003) IBM Systems. Journal , vol.42 , Issue.2 , pp. 338-346
    • Grochowski, E.1    Halem, R.2
  • 9
    • 55449115308 scopus 로고    scopus 로고
    • R. Freitas and W. Wilcke. Storage-class memory: The next storage system technology. IBM Journal of R. and D., 52(4/5):439-447, 2008.
    • R. Freitas and W. Wilcke. Storage-class memory: The next storage system technology. IBM Journal of R. and D., 52(4/5):439-447, 2008.
  • 12
    • 49549090473 scopus 로고    scopus 로고
    • A 45nm Self-Aligned-Contact Process 1Gb NOR Flash with 5MB/s Program Speed
    • Feb
    • J. Javanifard et al. A 45nm Self-Aligned-Contact Process 1Gb NOR Flash with 5MB/s Program Speed. In 2008 IEEE International Solid-State Circuits Conference, pages 424-426, Feb. 2008.
    • (2008) 2008 IEEE International Solid-State Circuits Conference , pp. 424-426
    • Javanifard, J.1
  • 14
    • 85008054314 scopus 로고    scopus 로고
    • isscc08
    • 150-162
    • K. J. Lee et al. A 90nm 1.8V 512Mb Diode-Switch PRAM with 266 MB/s Read Throughput. isscc08, 43(1):150-162, 2008.
    • (2008) , vol.43 , Issue.1
    • Lee, K.J.1
  • 17
    • 0345890538 scopus 로고    scopus 로고
    • The Case for SRAM Main Memory
    • P. Machanick. The Case for SRAM Main Memory. Computer Architecture News, 24(5):23-30, 1996.
    • (1996) Computer Architecture News , vol.24 , Issue.5 , pp. 23-30
    • Machanick, P.1
  • 20
    • 70450238813 scopus 로고    scopus 로고
    • MetaRAM, Inc
    • MetaRAM, Inc. MetaRAM. http://www.metaram.com/.
    • MetaRAM
  • 22
    • 49549122064 scopus 로고    scopus 로고
    • A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface
    • Feb
    • D. Nobunagal et al. A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface. In 2008 IEEE International Solid-State Circuits Conference, pages 426-427, Feb. 2008.
    • (2008) 2008 IEEE International Solid-State Circuits Conference , pp. 426-427
    • Nobunagal, D.1
  • 23
    • 36049053305 scopus 로고
    • Reversible electrical switching phenomena in disordered structures
    • S. R. Ovshinsky. Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett., 21(20), 1968.
    • (1968) Phys. Rev. Lett , vol.21 , Issue.20
    • Ovshinsky, S.R.1
  • 24
    • 55449106208 scopus 로고    scopus 로고
    • S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y.-C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S.-H. Chen, H.-L. Lung, and C. H. Lam. Phase-change random access memory: A scalable technology. IBM Journal of R. and D., 52(4/5):465-479, 2008.
    • S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y.-C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S.-H. Chen, H.-L. Lung, and C. H. Lam. Phase-change random access memory: A scalable technology. IBM Journal of R. and D., 52(4/5):465-479, 2008.
  • 25
    • 0040290552 scopus 로고    scopus 로고
    • Structure of the Optical Phase Change Memory Alloy, AgVInSbTe, Determined by Optical Spectroscopy and Electron Diffraction
    • J. Tominaga, T. Kikukawa, M. Takahashi, and R. T. Phillips. Structure of the Optical Phase Change Memory Alloy, AgVInSbTe, Determined by Optical Spectroscopy and Electron Diffraction,. J. Appl. Phys., 82(7), 1997.
    • (1997) J. Appl. Phys , vol.82 , Issue.7
    • Tominaga, J.1    Kikukawa, T.2    Takahashi, M.3    Phillips, R.T.4
  • 26
    • 70450259747 scopus 로고    scopus 로고
    • Current & Future Main Memory Technology for IA Platforms
    • C. Weissenberg. Current & Future Main Memory Technology for IA Platforms. Intel Developer Forum, 2006.
    • (2006) Intel Developer Forum
    • Weissenberg, C.1
  • 27
    • 0005158609 scopus 로고
    • Rapid-Phase Transitions of GeTe-Sb2Te3 Pseudobinary Amorphous Thin Films for an Optical Disk Memory
    • N. Yamada, E. Ohno, K. Nishiuchi, and N. Akahira. Rapid-Phase Transitions of GeTe-Sb2Te3 Pseudobinary Amorphous Thin Films for an Optical Disk Memory. J. Appl. Phys., 69(5), 1991.
    • (1991) J. Appl. Phys , vol.69 , Issue.5
    • Yamada, N.1    Ohno, E.2    Nishiuchi, K.3    Akahira, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.