Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using "water-free" metal-halide/metal alkoxide reactants

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 34, Issue 1, 2016, Pages

  Atanasov, Sarah E ^a   Kalanyan, Berç ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; METAL HALIDES; SILICON; SILICON OXIDES; SURFACE REACTIONS; TITANIUM; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH INITIATION; HYDROGEN-TERMINATED SILICON; OXIDIZED SURFACES; REACTION CHEMISTRY; SELECTIVE AREA GROWTH; SELECTIVE-AREA ATOMIC LAYER DEPOSITION; TITANIUM TETRACHLORIDES; TITANIUM TETRAISOPROPOXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84952845783     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.4938481     Document Type: Article

References (30)

1. E. K. Broadbent and C. L. Ramiller, J. Electrochem. Soc. 131, 1427 (1984). 10.1149/1.2115864
2. T. T. Kodas and M. J. Hampden-Smith, The Chemistry of Metal CVD (VCH, Weinheim, NY, 1994).
3. W. L. Gladfelter, Chem. Mater. 5, 1372 (1993). 10.1021/cm00034a004
4. K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons, Appl. Phys. Lett. 86, 051903 (2005). 10.1063/1.1852079
5. R. Chen, H. Kim, P. C. McIntyre, D. W. Porter, and S. F. Bent, Appl. Phys. Lett. 86, 191910 (2005). 10.1063/1.1922076
6. E. Farm, M. Kemell, M. Ritala, and M. Leskela, Chem. Vap. Deposition 12, 415 (2006). 10.1002/cvde.200604219
7. A. Sinha, D. W. Hess, and C. L. Henderson, J. Electrochem. Soc. 153, G465 (2006). 10.1149/1.2184068
8. X. Jiang and S. F. Bent, J. Phys. Chem. C 113, 17613 (2009). 10.1021/jp905317n
9. A. J. M. Mackus, A. A. Bol, and W. M. M. Kessels, Nanoscale 6, 10941 (2014). 10.1039/C4NR01954G
10. F. S. Minaye Hashemi, C. Prasittichai, and S. F. Bent, ACS Nano 9, 8710 (2015). 10.1021/acsnano.5b03125
11. M. Leskelä and M. Ritala, Thin Solid Films 409, 138 (2002). 10.1016/S0040-6090(02)00117-7
12. M. Ritala, Science 288, 319 (2000). 10.1126/science.288.5464.319
13. S. M. George, Chem. Rev. 110, 111 (2010). 10.1021/cr900056b
14. M. Ritala, M. Leskela, L. Niinisto, and P. Haussalo, Chem. Mater. 5, 1174 (1993). 10.1021/cm00032a023
15. Q. Xie, Y.-L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G.-P. Ru, B.-Z. Li, and X.-P. Qu, J. Appl. Phys. 102, 083521 (2007). 10.1063/1.2798384
16. J. Aarik, A. Aidla, H. Mändar, and V. Sammelselg, J. Cryst. Growth 220, 531 (2000). 10.1016/S0022-0248(00)00897-6
17. E.-L. Lakomaa, S. Haukka, and T. Suntola, Appl. Surf. Sci. 60-61, 742 (1992). 10.1016/0169-4332(92)90506-S
18. J. D. Ferguson, A. R. Yoder, A. W. Weimer, and S. M. George, Appl. Surf. Sci. 226, 393 (2004). 10.1016/j.apsusc.2003.10.053
19. R. P. Chaukulkar and S. Agarwal, J. Vac. Sci. Technol. Vac. Surf. Films 31, 031509 (2013). 10.1116/1.4798385
20. V. R. Anderson, A. S. Cavanagh, A. I. Abdulagatov, Z. M. Gibbs, and S. M. George, J. Vac. Sci. Technol. Vac. Surf. Films 32, 01A114 (2014). 10.1116/1.4839015
21. S. Haukka and A. Root, J. Phys. Chem. 98, 1695 (1994). 10.1021/j100057a025
22. O. Sneh and S. M. George, J. Phys. Chem. 99, 4639 (1995). 10.1021/j100013a039
23. L. T. Zhuravlev, Colloids Surf. Physicochem. Eng. Asp ects 173, 1 (2000). 10.1016/S0927-7757(00)00556-2
24. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989). 10.1116/1.575980
25. C. J. Powell and A. Jablonski, NIST Electron Effective-Attenuation-Length Database (National Institute of Standards and Technology, Gaithersburg, MD, 2011).
26. G. G. Fuentes, E. Elizalde, F. Yubero, and J. M. Sanz, Surf. Interface Anal. 33, 230 (2002). 10.1002/sia.1205
27. S. Haukka, E. L. Lakomaa, and A. Root, J. Phys. Chem. 97, 5085 (1993). 10.1021/j100121a040
28. M. L. Green et al., J. Appl. Phys. 92, 7168 (2002). 10.1063/1.1522811
29. M. A. Alam and M. L. Green, J. Appl. Phys. 94, 3403 (2003). 10.1063/1.1599978
30. O. Nilsen, C. E. Mohn, A. Kjekshus, and H. Fjellvåg, J. Appl. Phys. 102, 024906 (2007). 10.1063/1.2756514