Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber

Advanced Energy Materials

Volumn 5, Issue 24, 2015, Pages

  Veal, Tim D ^a   Feldberg, Nathaniel ^b   Quackenbush, Nicholas F ^c   Linhart, Wojciech M ^a   Scanlon, David O ^d,e   Piper, Louis F J ^c   Durbin, Steven M ^f  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY AT BUFFALO   (United States)

^c BINGHAMTON UNIVERSITY   (United States)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

^e DIAMOND LIGHT SOURCE LTD   (United Kingdom)

^f Western Michigan University   (United States)

Author keywords

band gap; energy materials; semiconductors; thin films; ZnSnN2

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; FILMS; LIGHT ABSORPTION; POSITIVE IONS; SEMICONDUCTOR MATERIALS; SOLAR ABSORBERS; THIN FILMS; ZINC SULFIDE;

CATION DISORDER; DENSITIES OF STATE; ENERGY MATERIALS; GROWTH CONDITIONS; HARD X-RAY PHOTOEMISSION; MODEL CURVE; OPTICAL ABSORPTION EDGE; ZNSNN2;

ENERGY GAP;

EID: 84952758975     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201501462     Document Type: Article

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