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Volumn 26, Issue 8, 2014, Pages 1235-1241

Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

(8) Narang, Prineha a,c Chen, Shiyou c,d Coronel, Naomi C a Gul, Sheraz d Yano, Junko c,d Wang, Lin Wang c,d Lewis, Nathan S b,c Atwater, Harry A a,c

a California Institute of Technology (United States)

b California Institute of Technology (United States)

c Joint Center for Artificial Photosynthesis (United States)

d LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

bandgap; miscibility; Zn(Sn,Ge)N2 semiconductor alloys

Indexed keywords

EID: 84894415151 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201304473 Document Type: Article

Times cited : (81)

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