Growth of ZnSnN2 by molecular beam epitaxy

Journal of Electronic Materials

Volumn 43, Issue 4, 2014, Pages 884-888

  Feldberg, N ^a   Aldous, J D ^a   Stampe, P A ^b   Kennedy, R J ^b   Veal, T D ^c   Durbin, S M ^a,d  

^a UNIVERSITY AT BUFFALO   (United States)

^b FLORIDA A AND M UNIVERSITY   (United States)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d Western Michigan University   (United States)

Author keywords

earth abundant element semiconductor; II IV nitride; MBE

Indexed keywords

CRYSTALLINITY; GERMANIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALLINE MATERIALS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TIN COMPOUNDS;

CRYSTALLINE ORDER; DEPOSITION CONDITIONS; GROWTH PARAMETERS; MONOCLINIC STRUCTURES; ORTHORHOMBIC LATTICES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SINGLE-CRYSTAL MATERIALS; SUBSTRATE TEMPERATURE;

ZINC COMPOUNDS;

EID: 84899123013     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2962-8     Document Type: Article

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