ZnSnN2: A new earth-abundant element semiconductor for solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 2524-2527

  Feldberg, N ^a   Keen, B ^a   Aldous, J D ^a   Scanlon, D O ^b   Stampe, P A ^c   Kennedy, R J ^c   Reeves, R J ^d   Veal, T D ^e   Durbin, S M ^a,f  

^a UNIVERSITY AT BUFFALO   (United States)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c FLORIDA A AND M UNIVERSITY   (United States)

^d UNIVERSITY OF CANTERBURY   (New Zealand)

^e UNIVERSITY OF LIVERPOOL   (United Kingdom)

^f State University of New York   (United States)

Author keywords

earth abundant element; II IV V2; molecular beam epitaxy; photovoltaics; ZnSnN2

Indexed keywords

BAND GAP ENERGY; DENSITY FUNCTIONALS; II-IV-V2; LIGHTING APPLICATIONS; PHOTOVOLTAICS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ZNSNN2;

DENSITY FUNCTIONAL THEORY; ENERGY GAP; GERMANIUM; MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH;

EID: 84869433382     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318108     Document Type: Conference Paper

References (13)

1. M. A. Green, K. Emery, D. L. King, S. Igari, W. Warta, "Solar cell efficiency tables (version 22)," Progress in Photovoltaics: Research and Applications, Vol. 11, pp. 347-352, 2003.
2. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, M. Powalla, "New world record efficiency for Cu(In, Ga)Se2 thin-film solar cells beyond 20%,", Progress in Photovoltaics: Research and Applications, Vol. 19, pp. 894-897, 2011.
3. F. Kreith and D.Y. Goswami (Eds.), Handbook of Energy Efficiency and Renewable Energy, Boca Raton, FL: CRC Press, 2007
4. "Mineral Commodity Summaries,", U.S. Geological Survey, pp. 52-53, 170-171 and 188-189, 2011
5. 2 with distorted wurtzite structure", J. Mater. Sci. Lett., Vol. 11, pp. 424-426, 1992.
6. 2 compounds", Phys. Rev. B, Vol. 84, p. 165204, 2011.
7. G. Kresse, J. Furthmüller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set,", Phys. Rev. B, Vol. 54, pp. 11169-11186, 1996.
8. G. Kresse, J. Hafner, "Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium,", Phys. Rev. B, Vol. 49, pp. 14251-14271, 1994.
9. 2 rutile and anatase polytypes: Performances of different exchange-correlation functionals,", J. Chem. Phys., Vol. 126, p. 154703, 2007.
10. P. E. Blöchl, "Projector augmented-wave method,", Phys. Rev. B, Vol. 50, pp. 17953-17979, 1994.
11. G. Kresse, D. Joubert, "From ultrasoft pseudopotentials to the projector augmented-wave method,", Phys. Rev. B, Vol. 59, pp. 17581775, 1999.
12. C.S. Gallinat, G. Koblmüller, J.S. Brown, J.S. Speck, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN,", J. Appl. Phys, Vol. 102, p. 064907, 2007
13. 2 grown from elemental Zn and Ge sources", J. of Crys. Growth, Vol. 310, pp. 1057-1061, 2008.