Innovative nitride passivation for pseudomorphic GaAs HEMTs and impact on device performance

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 235-240

  Chou, Y C ^a   Nam, P ^a   Li, G P ^b   Lai, R ^a   Kim, L K ^c   Grundbacher, R ^a   Ahlers, E ^a   Ra, Y ^c   Xu, Q ^b   Biedenbender, M B ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b University of California at Irvine   (United States)

^c Bethel Material Research   (United States)

Author keywords

Chemical vapor deposition; Gallium arsenide; HEMTs; Hydrogen; MODFETs; Passivation; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CUTOFF FREQUENCY; DEPOSITION; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; INDUCTIVELY COUPLED PLASMA; MODFETS; NITRIDES; PASSIVATION; PLASMA APPLICATIONS; PLASMA DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE; VAPOR DEPOSITION;

COMPOUND SEMICONDUCTORS; HIGH-DENSITY INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; HYDROGEN CONCENTRATION; LOW HYDROGEN CONCENTRATION; PLASMA CHEMISTRIES; PLASMA TEMPERATURE; PLASMAENHANCED CVD (PECVD); REVERSE BREAKDOWN VOLTAGE;

PLASMA CVD;

EID: 84949235698     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996642     Document Type: Conference Paper

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