Understanding the degradation of InP/InGaAs heterojunction bipolar transistors induced by silicon nitride passivation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 252-255

  Wang, H ^a   Geok Ing Ng, ^a   Yang, H ^a   Radhakrishnan, K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

REVERSE LEAKAGE CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034854251     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)