Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 733-742

  Lee, J W ^a   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^b   Constantine, C ^c   Barratt, C ^c   Shul, R J ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Plasma Therm IP   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CRYSTAL DEFECTS; DRY ETCHING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON CYCLOTRON RESONANCE; PLASMA DENSITY; PLASMA SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

INDUCTIVELY COUPLED PLASMAS (ICP);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032066441     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00247-5     Document Type: Article

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