Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 417-420

  Moriguchi, H ^a   Hoshi, S ^a   Ohshima, T ^a   Izumi, T ^a   Tsunotani, M ^a   Kimura, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; LEAKAGE CURRENTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; STRESS ANALYSIS; SURFACE ROUGHNESS;

PASSIVATION FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034841959     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2001.929147     Document Type: Article

References (6)