Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

Nature Physics

Volumn 11, Issue 12, 2015, Pages 1032-1036

  Shimazaki, Y ^a   Yamamoto, M ^a,b   Borzenets, I V ^a   Watanabe, K ^c   Taniguchi, T ^c   Tarucha, S ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEGREES OF FREEDOM (MECHANICS); FRUITS; GRAPHENE; HONEYCOMB STRUCTURES; OPTICAL LATTICES; QUANTUM THEORY;

BILAYER GRAPHENE; DEGREE OF FREEDOM; ELECTRICAL CONTROL; ELECTRONIC SYSTEMS; HONEYCOMB LATTICES; INVERSION SYMMETRY; SPATIAL INVERSION SYMMETRY; ZERO MAGNETIC FIELDS;

LANDFORMS;

EID: 84949232558     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys3551     Document Type: Article

References (37)

1. Jungwirth, T., Wunderlich, J. & Olejník, K. Spin Hall effect devices. Nature Mater. 11, 382-390 (2012).
2. Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008).
3. Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012).
4. Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS#inf#2#/inf# monolayers by optical pumping. Nature Nanotech. 7, 490-493 (2012).
5. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS#inf#2#/inf# by optical helicity. Nature Nanotech. 7, 494-498 (2012).
6. Li, Y. et al. Valley splitting and polarization by the Zeeman effect in monolayer MoSe#inf#2#/inf#. Phys. Rev. Lett. 113, 266804 (2014).
7. MacNeill, D. et al. Breaking of valley degeneracy by magnetic field in monolayer MoSe#inf#2#/inf#. Phys. Rev. Lett. 114, 037401 (2015).
8. Srivastava, A. et al. Valley Zeeman effect in elementary optical excitations of monolayer WSe#inf#2#/inf#. Nature Phys. 11, 141-147 (2015).
9. Aivazian, G. et al. Magnetic control of valley pseudospin in monolayer WSe#inf#2#/inf#. Nature Phys. 11, 148-152 (2015).
10. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007).
11. Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS#inf#2#/inf# transistors. Science 344, 1489-1492 (2014).
12. Gorbachev, R. V. et al. Detecting topological currents in graphene superlattices. Science 346, 448-451 (2014).
13. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous Hall effect. Rev. Mod. Phys. 82, 1539-1592 (2010).
14. Xiao, D., Chang, M.-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959-2007 (2010).
15. Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F. & Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151-157 (2007).
16. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820-823 (2009).
17. Zou, K. & Zhu, J. Transport in gapped bilayer graphene: The role of potential fluctuations. Phys. Rev. B 82, 081407 (2010).
18. Taychatanapat, T. & Jarillo-Herrero, P. Electronic transport in dual-gated bilayer graphene at large displacement fields. Phys. Rev. Lett. 105, 166601 (2010).
19. Yan, J. & Fuhrer, M. S. Charge transport in dual gated bilayer graphene with Corbino geometry. Nano Lett. 10, 4521-4525 (2010).
20. Koshino, M. Electronic transport in bilayer graphene. New J. Phys. 11, 095010 (2009).
21. Zhang, F., Jung, J., Fiete, G. A., Niu, Q. & MacDonald, A. H. Spontaneous quantum Hall states in chirally stacked few-layer graphene systems. Phys. Rev. Lett. 106, 156801 (2011).
22. Valenzuela, S. O. & Tinkham, M. Direct electronic measurement of the spin Hall effect. Nature 442, 176-179 (2006).
23. Abanin, D. A., Shytov, A. V., Levitov, L. S. & Halperin, B. I. Nonlocal charge transport mediated by spin diffusion in the spin Hall effect regime. Phys. Rev. B 79, 035304 (2009).
24. Brüne, C. et al. Evidence for the ballistic intrinsic spin Hall effect in HgTe nanostructures. Nature Phys. 6, 448-454 (2010).
25. Abanin, D. A. et al. Giant nonlocality near the Dirac point in graphene. Science 332, 328-330 (2011).
26. Balakrishnan, J., Koon, G. K. W., Jaiswal, M., Neto, A. H. C. & Özyilmaz, B. Colossal enhancement of spin-orbit coupling in weakly hydrogenated graphene. Nature Phys. 9, 284-287 (2013).
27. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech. 5, 722-726 (2010).
28. Ohta, T., Bostwick, A., Seyller, T., Horn, K. & Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science 313, 951-954 (2006).
29. Tikhonenko, F. V., Horsell, D. W., Gorbachev, R. V. & Savchenko, A. K. Weak localization in graphene flakes. Phys. Rev. Lett. 100, 056802 (2008).
30. Lensky, Y. D., Song, J. C. W., Samutpraphoot, P. & Levitov, L. S. Topological valley currents in gapped Dirac materials. Phys. Rev. Lett. 114, 256601 (2015).
31. Li, J., Martin, I., Büttiker, M. & Morpurgo, A. F. Topological origin of subgap conductance in insulating bilayer graphene. Nature Phys. 7, 38-42 (2010).
32. Ju, L. et al. Topological valley transport at bilayer graphene domain walls. Nature 520, 650-655 (2015).
33. Sui, M. et al. Gate-tunable topological valley transport in bilayer graphene. Nature Phys. http://dx.doi.org/10.1038/nphys3485 (2015).
34. Taychatanapat, T., Watanabe, K., Taniguchi, T. & Jarillo-Herrero, P. Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene. Nature Phys. 7, 621-625 (2011).
35. Jalilian, R. et al. Scanning gate microscopy on graphene: Charge inhomogeneity and extrinsic doping. Nanotechnology 22, 295705 (2011).
36. Goossens, A. M. et al. Mechanical cleaning of graphene. Appl. Phys. Lett. 100, 073110 (2012).
37. Lindvall, N., Kalabukhov, A. & Yurgens, A. Cleaning graphene using atomic force microscope. J. Appl. Phys. 111, 064904 (2012).