Gate-tunable topological valley transport in bilayer graphene

Nature Physics

Volumn 11, Issue 12, 2015, Pages 1027-1031

  Sui, Mengqiao ^a,b   Chen, Guorui ^a,b   Ma, Liguo ^a,b   Shan, Wen Yu ^c   Tian, Dai ^a,b   Watanabe, Kenji ^d   Taniguchi, Takashi ^d   Jin, Xiaofeng ^a,b   Yao, Wang ^e   Xiao, Di ^c   Zhang, Yuanbo ^a,b  

^a FUDAN UNIVERSITY   (China)

^b Shanghai Electronic Transactions and Information Service   (China)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELDS; GRAPHENE; TOPOLOGY;

BILAYER GRAPHENE; BREAKING OF INVERSION SYMMETRIES; DEGREE OF FREEDOM; INVERSION SYMMETRY; NONLOCAL; NONLOCAL RESPONSE; PSEUDOSPIN; TIME REVERSAL;

LANDFORMS;

EID: 84949219439     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys3485     Document Type: Article

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