An analysis of bipolar breakdown and its application to the design of ESD protection circuits

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 240-245

  Joshi, Sopan ^a   Ida, Richard ^b   Givelin, Philippe ^b   Rosenbaum, Elyse ^a  

^a United States of America   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC DISCHARGES; ELECTRIC NETWORK SYNTHESIS; ELECTRIC POTENTIAL; ELECTROSTATICS; INDUCTANCE; NETWORKS (CIRCUITS); NUMERICAL METHODS;

BIPOLAR BREAKDOWN; PROTECTION CIRCUIT; PROTECTION CIRCUIT DESIGN; ZENER DIODE;

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0035014834     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2001.922908     Document Type: Article

References (6)

1. Design and layout of a high ESD performance NPN structure for submicron BiCMOS/bipolar circuits
2. On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime - modeling and applications
3. An analytical breakdown model for short-channel MOSFET's
4. ESD protection for BiCMOS circuits