The process modeling hierarchy: Connecting atomistic calculations to nanoscale behavior

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 213-216

  Dunham, S T ^a  

^a University of Washington   (United States)

Author keywords

Bismuth; Boron; Circuit simulation; Fabrication; Ion implantation; Joining processes; Kinetic theory; Monte Carlo methods; Nanoscale devices; Very large scale integration

Indexed keywords

BISMUTH; BORON; CIRCUIT SIMULATION; FABRICATION; ION IMPLANTATION; KINETIC THEORY; NANOTECHNOLOGY; SEMICONDUCTOR DEVICES; VLSI CIRCUITS;

ATOMISTIC CALCULATIONS; JOINING PROCESS; NANO SCALE; NANOSCALE DEVICE; PROCESS MODELING; VLSI PROCESS;

MONTE CARLO METHODS;

EID: 84948745380     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034555     Document Type: Conference Paper

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