Junction depth reduction of ion implanted boron in silicon through fluorine ion implantation

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages B4.2.1-B4.2.6

  Robertson, L S ^a   Warnes, P N ^a   Jones, K S ^a   Earles, S K ^a   Law, M E ^a   Downey, D F ^b   Falk, S ^b   Liu, J ^b  

^a University of Florida   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009919663     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-610-B4.2     Document Type: Article

References (10)

1. Appl. Phys. Lett.