Comparison of ultra-low-energy ion implantation of boron and BF2

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 71-75

  Park, Jihwan ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON COMPOUNDS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; MONTE CARLO METHODS; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032664180     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-71     Document Type: Article

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