Solution-processed carbon nanotube thin-film complementary static random access memory

Nature Nanotechnology

Volumn 10, Issue 11, 2015, Pages 944-948

  Geier, Michael L ^a   McMorrow, Julian J ^a   Xu, Weichao ^b   Zhu, Jian ^a   Kim, Chris H ^b   Marks, Tobin J ^a,c   Hersam, Mark C ^a,c  

^a Northwestern University   (United States)

^b University of Minnesota   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; LOGIC CIRCUITS; LOW POWER ELECTRONICS; METALS; MOS DEVICES; NANOTUBES; OXIDE SEMICONDUCTORS; SINGLE-WALLED CARBON NANOTUBES (SWCN); STATIC RANDOM ACCESS STORAGE; THIN FILM TRANSISTORS; THIN FILMS; YARN;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRONIC PERFORMANCE; HIGH-FREQUENCY APPLICATIONS; HIGH-PERFORMANCE INTEGRATED CIRCUITS; SEMICONDUCTING-SWCNTS; SINGLE-WALLED CARBON NANOTUBE (SWCNTS); SPATIALLY HOMOGENEOUS; STATIC RANDOM ACCESS MEMORY;

THIN FILM CIRCUITS;

SINGLE WALLED NANOTUBE;

ARTICLE; COMPUTER; ELECTRIC POTENTIAL; ELECTROCHEMICAL ANALYSIS; ELECTRONICS; ENCAPSULATION; FREQUENCY; INTEGRATED CIRCUIT; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84947030091     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.197     Document Type: Article

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