메뉴 건너뛰기




Volumn 2001-January, Issue , 2001, Pages 240-245

An analysis of bipolar breakdown and its application to the design of ESD protection circuits

Author keywords

Application software; BiCMOS integrated circuits; Breakdown voltage; Circuit synthesis; Diodes; Electric breakdown; Electrostatic discharge; Protection; Resistors; Space charge

Indexed keywords

APPLICATION PROGRAMS; DIODES; ELECTRIC BREAKDOWN; ELECTRIC GROUNDING; ELECTRIC SPACE CHARGE; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; INTEGRATED CIRCUIT MANUFACTURE; RESISTORS;

EID: 84949784877     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922908     Document Type: Conference Paper
Times cited : (13)

References (6)
  • 4
    • 0001960159 scopus 로고
    • On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime - Modeling and applications
    • June
    • M. Reisch, "On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime - modeling and applications," IEEE Trans. on Electron Devices, pp. 1398-1409, June 1992.
    • (1992) IEEE Trans. on Electron Devices , pp. 1398-1409
    • Reisch, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.