Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Microelectronics Reliability

Volumn 41, Issue 11, 2001, Pages 1771-1779

  Wu, J ^a   Juliano, P ^a   Rosenbaum, E ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THYRISTORS;

VOLTAGE OVERSHOOTS;

ELECTROSTATICS;

EID: 0035501170     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00033-6     Document Type: Conference Paper

References (23)

1. Plasma-charging damage and ESD, help each other?
2. The effects of high electric field transients on thin gate oxide MOSFETs
3. Simulation of complete CMOS I/O circuit response to CDM stress
4. Very-fast transmission line pulse of integrated structures and the charged device model
5. Transmission line pulse techniques for circuit modeling of ESD phenomena
6. Analyzing the switch behavior of ESD-protection transistors by very fast transmission line pulsing
7. Breakdown mechanisms in MOS capacitors following electrical overstress
8. 2 reliability
9. Non-uniform ESD current distribution due to improper metal routing
10. Analysis of oxide breakdown mechanism occurring during ESD pulse
11. 2
12. Experimental evidence for voltage driven breakdown models in ultrathin gate oxides
13. Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
14. Temperature acceleration of time-dependent dielectric breakdown
15. Thermal failure in semiconductor devices
16. Reliability projection for ultra-thin oxides at low voltage
17. Electron energy dependence of metal-oxide-semiconductor degradation
18. 2 breakdown model for every low voltage lifetime extrapolation
19. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions
20. Bi-modal triggering for LVSCR ESD protection device
21. Advanced CMOS protection device trigger mechanisms during CDM