Effects of nitrogen incorporation HfAlOx films on gate leakage current from XPS study of Hf bonding states

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 180-185

  Nishimura, T ^a   Iwamoto, K ^a   Tominaga, K ^a   Yasuda, T ^a   Mizubayashi, W ^a   Fujii, S ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Amorphous materials; Annealing; Bonding; Crystallization; Hafnium; High K dielectric materials; High K gate dielectrics; Leakage current; Materials science and technology; Nitrogen

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BONDING; CRYSTALLIZATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM; NITROGEN;

BONDING CONFIGURATIONS; BONDING STATE; GATE-LEAKAGE CURRENT; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; MATERIALS SCIENCE AND TECHNOLOGY; N INCORPORATION; NITROGEN INCORPORATION;

LEAKAGE CURRENTS;

EID: 84945117127     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159208     Document Type: Conference Paper

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