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Volumn 15, Issue 10, 2015, Pages 6400-6405

Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition

Author keywords

2D materials; high mobility; In2Se3 monolayer; PVD

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; DEPOSITION; FIELD EFFECT TRANSISTORS; PHYSICAL VAPOR DEPOSITION; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

EID: 84944350851     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01590     Document Type: Article
Times cited : (265)

References (41)
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    • Ho, C.H.1
  • 35
    • 84881561449 scopus 로고    scopus 로고
    • Tao, X.; Gu, Y. Nano Lett. 2013, 13 (8) 3501-3505 10.1021/nl400888p
    • (2013) Nano Lett. , vol.13 , Issue.8 , pp. 3501-3505
    • Tao, X.1    Gu, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.