Accessing a growth window for SrVO3 thin films

Applied Physics Letters

Volumn 107, Issue 14, 2015, Pages

  Brahlek, Matthew ^a   Zhang, Lei ^a   Eaton, Craig ^a   Zhang, Hai Tian ^a   Engel Herbert, Roman ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; POSITIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TANTALUM; THIN FILMS;

CRYSTALLINE PHASIS; DEFECT CONCENTRATIONS; HIGH GROWTH TEMPERATURES; METAL ORGANIC PRECURSORS; RESIDUAL RESISTIVITY; STOICHIOMETRIC FILMS; STRUCTURAL AND ELECTRONIC PROPERTIES; THERMAL EFFUSION CELL;

FILM GROWTH;

EID: 84943628740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4932198     Document Type: Article

References (39)

1. Y. Tokura, Phys. Today 56 (7), 50 (2003). 10.1063/1.1603080
2. P. A. Lee and X.-G. Wen, Rev. Mod. Phys. 78, 17 (2006). 10.1103/RevModPhys.78.17
3. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). 10.1103/RevModPhys.70.1039
4. J. M. Tomczak and S. Biermann, Phys. Status Solidi 246, 1996 (2009). 10.1002/pssb.200945231
5. E. Morosan, D. Natelson, A. H. Nevidomskyy, and Q. Si, Adv. Mater. 24, 4896 (2012). 10.1002/adma.201202018
6. J. A. Moyer, C. Eaton, and R. Engel-Herbert, Adv. Mater. 25, 3578 (2013). 10.1002/adma.201300900
7. A. Fujimori, I. Hase, H. Namatame, Y. Fujishima, Y. Tokura, K. Takegahara, and F. M. F. de Groot, Phys. Rev. Lett. 69, 1796 (1992). 10.1103/PhysRevLett.69.1796
8. W. C. Sheets, B. Mercey, and W. Prellier, Appl. Phys. Lett. 91, 192102 (2007). 10.1063/1.2805222
9. D. L. Ritums, N. J. Wu, D. Liu, Q. Zhong, Y. M. Chen, X. Zhang, P. C. Chou, and A. Ignatiev, in Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics (ISAF) (IEEE, 1996), pp. 417-420
10. H. Nagata, T. Tsukahara, M. Yoshimoto, and H. Koinuma, Thin Solid Films 208, 264 (1992). 10.1016/0040-6090(92)90654-T
11. P. W. Yip and K. H. Wong, MRS Proc. 623, 347 (2000). 10.1557/PROC-623-347
12. M. Gu, S. A. Wolf, and J. Lu, Adv. Mater. Interfaces 1, 1300126 (2014). 10.1002/admi.201300126
13. C. Eaton, J. A. Moyer, H. M. Alipour, E. D. Grimley, M. Brahlek, J. M. LeBeau, and R. Engel-Herbert, J. Vac. Sci. Technol., A 33, 061504 (2015). 10.1116/1.4927439
14. K. Byczuk, W. Hofstetter, and D. Vollhardt, Phys. Rev. Lett. 94, 056404 (2005). 10.1103/PhysRevLett.94.056404
15. P. A. Lee, Rev. Mod. Phys. 57, 287 (1985). 10.1103/RevModPhys.57.287
16. W. P. McCray, Nat. Nanotechnol. 2, 259 (2007). 10.1038/nnano.2007.121
17. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic Press, Inc., San Diego, 1993)
18. L. Pfeiffer and K. W. West, Phys. E 20, 57 (2003). 10.1016/j.physe.2003.09.035
19. J. F. Ihlefeld, A. Kumar, V. Gopalan, D. G. Schlom, Y. B. Chen, X. Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L. W. Martin, Y. H. Chu, and R. Ramesh, Appl. Phys. Lett. 91, 071922 (2007). 10.1063/1.2767771
20. C. D. Theis, J. Yeh, D. G. Schlom, M. E. Hawley, and G. W. Brown, Thin Solid Films 325, 107 (1998). 10.1016/S0040-6090(98)00507-0
21. J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, and D. G. Schlom, Appl. Phys. Lett. 96, 262905 (2010). 10.1063/1.3457786
22. B. Jalan, P. Moetakef, and S. Stemmer, Appl. Phys. Lett. 95, 032906 (2009). 10.1063/1.3184767
23. J. N. Eckstein and I. Bozovic, Annu. Rev. Mater. Sci. 25, 679 (1995). 10.1146/annurev.ms.25.080195.003335
24. B. Jalan, R. Engel-Herbert, J. Cagnon, and S. Stemmer, J. Vac. Sci. Technol., A 27, 230 (2009). 10.1116/1.3065713
25. R. Engel-Herbert, Molecular Beam Epitaxy (Elsevier, 2013), pp. 417-449
26. H. Koinuma, M. Yoshimoto, H. Nagata, and T. Tsukahara, Solid State Commun. 80, 9 (1991). 10.1016/0038-1098(91)90588-M
27. W. T. Tsang, J. Cryst. Growth 95, 121 (1989). 10.1016/0022-0248(89)90364-3
28. H. Lüth, Surf. Sci. 299-300, 867 (1994). 10.1016/0039-6028(94)90703-X
29. J. Son, P. Moetakef, B. Jalan, O. Bierwagen, N. J. Wright, R. Engel-Herbert, and S. Stemmer, Nat. Mater. 9, 482 (2010). 10.1038/nmat2750
30. P. Xu, D. Phelan, J. S. Jeong, K. A. Mkhoyan, and B. Jalan, Appl. Phys. Lett. 104, 082109 (2014). 10.1063/1.4866867
31. H.-T. Zhang, L. R. Dedon, L. W. Martin, and R. Engel-Herbert, Appl. Phys. Lett. 106, 233102 (2015). 10.1063/1.4922213
32. See supplementary material at http://dx.doi.org/10.1063/1.4932198 E-APPLAB-107-055540 for experimental methods and extended RHEED analysis
33. J. M. LeBeau, R. Engel-Herbert, B. Jalan, J. Cagnon, P. Moetakef, S. Stemmer, and G. B. Stephenson, Appl. Phys. Lett. 95, 142905 (2009). 10.1063/1.3243696
34. T. Ohnishi, K. Shibuya, T. Yamamoto, and M. Lippmaa, J. Appl. Phys. 103, 103703 (2008). 10.1063/1.2921972
35. C. T. Foxon, Appl. Surf. Sci. 50, 28 (1991). 10.1016/0169-4332(91)90135-7
36. A. P. Kajdos and S. Stemmer, Appl. Phys. Lett. 105, 191901 (2014). 10.1063/1.4901726
37. J. H. Lee, G. Luo, I. C. Tung, S. H. Chang, Z. Luo, M. Malshe, M. Gadre, A. Bhattacharya, S. M. Nakhmanson, J. A. Eastman, H. Hong, J. Jellinek, D. Morgan, D. D. Fong, and J. W. Freeland, Nat. Mater. 13, 879 (2014). 10.1038/nmat4039
38. Y. F. Nie, Y. Zhu, C.-H. Lee, L. F. Kourkoutis, J. A. Mundy, J. Junquera, P. Ghosez, D. J. Baek, S. Sung, X. X. Xi, K. M. Shen, D. A. Muller, and D. G. Schlom, Nat. Commun. 5, 4530 (2014). 10.1038/ncomms5530
39. L. Zhang and R. Engel-Herbert, Phys. Status Solidi RRL 8, 917 (2014). 10.1002/pssr.201409383