Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

Nature Materials

Volumn 13, Issue 9, 2014, Pages 879-883

  Lee, J H ^a,f   Luo, G ^b   Tung, I C ^a,c   Chang, S H ^a   Luo, Z ^a,d   Malshe, M ^a   Gadre, M ^b   Bhattacharya, A ^a   Nakhmanson, S M ^e   Eastman, J A ^a   Hong, H ^a   Jellinek, J ^a   Morgan, D ^b   Fong, D D ^a   Freeland, J W ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b University of Wisconsin Madison   (United States)

^c Northwestern University   (United States)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e UNIVERSITY OF CONNECTICUT   (United States)

^f Korea Atomic Energy Research Institute   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OXIDE FILMS; STRONTIUM COMPOUNDS;

CATALYTIC PROPERTIES; CONTROLLED SYNTHESIS; FUNDAMENTAL PHYSICS; HOMOLOGOUS SERIES; IN-SITU SYNCHROTRONS; RUDDLESDEN-POPPER PHASIS; SINGLE-CRYSTALLINE; THEORETICAL CALCULATIONS;

GROWTH (MATERIALS);

EID: 84906542236     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4039     Document Type: Article

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