Point defects in CdTe

Journal of Crystal Growth

Volumn 256, Issue 3-4, 2003, Pages 266-275

  Yujie, Li ^a,b   Guoli, Ma ^c   Wanqi, Jie ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c YANTAI UNIVERSITY   (China)

Author keywords

A1. Annealing; A1. Cd Partial pressure; A1. Defect concentrations; A1. Point defects; A1. Quasichemical equilibrium; B1. CdTe

Indexed keywords

CADMIUM COMPOUNDS; ENTROPY; FERMI LEVEL; PARTIAL PRESSURE; POINT DEFECTS; STOICHIOMETRY;

DEFECT CONCENTRATIONS;

CRYSTAL GROWTH;

EID: 0043172353     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01373-3     Document Type: Article

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