|
Volumn 173, Issue 3-4, 1997, Pages 325-329
|
Stoichiometric defects in semi-insulating GaAs
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
CRYSTAL GROWTH FROM MELT;
DISLOCATIONS (CRYSTALS);
FILM GROWTH;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING FILMS;
SINGLE CRYSTALS;
STOICHIOMETRY;
DEFORMATION ENERGY;
HIGH PRESSURE LIQUID ENCAPSULATED CZOCHRALSKI (HPLEC) GROWTH;
INTERSTITIALS;
MULTIPLE WAFER ANNEALING (MWA);
VERTICAL GRADIENT FREEZE (VGF);
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 0031117457
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00823-8 Document Type: Article |
Times cited : (15)
|
References (21)
|