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Volumn 173, Issue 3-4, 1997, Pages 325-329

Stoichiometric defects in semi-insulating GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SINGLE CRYSTALS; STOICHIOMETRY;

EID: 0031117457     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00823-8     Document Type: Article
Times cited : (15)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.