Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

ACS Nano

Volumn 9, Issue 9, 2015, Pages 8729-8736

  Jia, Jingyuan ^a,b   Jang, Sung Kyu ^a,b   Lai, Shen ^a,b   Xu, Jiao ^a,b   Choi, Young Jin ^c   Park, Jin Hong ^b   Lee, Sungjoo ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Sejong University   (South Korea)

Author keywords

2 D material; 2 D thickness control; black phosphorus; environmental stability; plasma etching

Indexed keywords

ESTERS; FIELD EFFECT TRANSISTORS; FILM PREPARATION; PASSIVATION; PHOSPHORUS; PLASMA APPLICATIONS; PLASMA ETCHING;

CHEMICAL DEGRADATION; ELECTRONIC TRANSPORT PROPERTIES; ENVIRONMENTAL STABILITY; HIGH FIELD EFFECT MOBILITY; IV CHARACTERISTICS; PLASMA ETCHING PROCESS; POLY(METHYL METHACRYLATE) (PMMA); ROOM TEMPERATURE;

PLASMA STABILITY;

EID: 84942237201     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04265     Document Type: Article

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