The preparation of bn-doped atomic layer graphene via plasma treatment and thermal annealing

Journal of Physical Chemistry C

Volumn 118, Issue 38, 2014, Pages 22268-22273

  Xu, Jiao ^a,b   Jang, Sung Kyu ^a,b   Lee, Jieun ^a,b   Song, Young Jae ^a   Lee, Sungjoo ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; ENERGY GAP; FILM PREPARATION; MONOLAYERS; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CVD SYNTHESIS; DOPING LEVELS; ELECTRICAL MEASUREMENT; GRAPHENE FILMS; HEXAGONAL STRUCTURES; LARGE-AREA GRAPHENE; PLASMA TREATMENT; THERMAL-ANNEALING;

GRAPHENE;

EID: 84949115353     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp504773h     Document Type: Article

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