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Volumn 26, Issue 36, 2014, Pages 6284-6289

Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density

(9) Lee, Shinbuhm a Sangle, Abhijeet a Lu, Ping b Chen, Aiping e Zhang, Wenrui c Lee, Jae Sung d Wang, Haiyan c Jia, Quanxi e MacManus Driscoll, Judith L a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b SANDIA NATIONAL LABORATORIES (United States)

c Department of Electrical and Computer Engineering (United States)

d Korea Institute for Advanced Study (South Korea)

e LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SCAFFOLDS;

ELECTRORESISTANCE; HETERO-INTERFACES; HIGH UNIFORMITY; NOVEL DEVICES; ORDERS OF MAGNITUDE; RESISTANCE VARIATIONS; ROOM TEMPERATURE; VERTICAL INTERFACES;

OXYGEN VACANCIES;

EID: 84941054015 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201401917 Document Type: Article

Times cited : (76)

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