Varistor piezotronics: Mechanically tuned conductivity in varistors

Journal of Applied Physics

Volumn 118, Issue 8, 2015, Pages

  Baraki, Raschid ^a   Novak, Nikola ^a   Hofstätter, Michael ^b   Supancic, Peter ^b   Rödel, Jürgen ^a   Frömling, Till ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b MATERIALS CENTER LEOBEN FORSCHUNG GMBH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; STRESSES; TEMPERATURE; ZINC OXIDE;

AVERAGE POTENTIAL; BOUNDARY POTENTIALS; DESCRIPTIVE MODEL; MECHANICAL STRESS; RISING TEMPERATURES; SCHOTTKY BARRIERS; TEMPERATURE-DEPENDENT ELECTRICAL PROPERTIES; THERMIONIC CURRENTS;

VARISTORS;

EID: 84940540260     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4929360     Document Type: Article

References (40)

1. K. Hübner, Phys. Status Solidi b 57, 627 (1973). 10.1002/pssb.2220570220
2. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, J. Appl. Phys. 87, 334 (2000). 10.1063/1.371866
3. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999). 10.1063/1.369664
4. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996). 10.1063/1.116115
5. L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 22, 457 (2001). 10.1109/55.954910
6. K. A. Jones, T. P. Chow, M. Wraback, M. Shatalov, Z. Sitar, F. Shahedipour, K. Udwary, and G. S. Tompa, J. Mater. Sci. 50, 3267 (2015). 10.1007/s10853-015-8878-3
7. X. Wang, J. Zhou, J. Song, J. Liu, N. Xu, and Z. L. Wang, Nano Lett. 6, 2768 (2006). 10.1021/nl061802g
8. Y. Zhang, Y. Liu, and Z. L. Wang, Adv. Mater. 23, 3004 (2011). 10.1002/adma.201100906
9. Z. L. Wang and W. Wu, Natl. Sci. Rev. 1, 62 (2014). 10.1093/nsr/nwt002
10. Z. L. Wang, Adv. Mater. 19, 889 (2007). 10.1002/adma.200602918
11. J. Zhou, Y. Gu, P. Fei, W. Mai, Y. Gao, R. Yang, G. Bao, and Z. L. Wang, Nano Lett. 8, 3035 (2008). 10.1021/nl802367t
12. J. Zhou, P. Fei, Y. Gu, W. Mai, Y. Gao, R. Yang, G. Bao, and Z. L. Wang, Nano Lett. 8, 3973 (2008). 10.1021/nl802497e
13. X. Wang, J. Song, J. Liu, and Z. L. Wang, Science 316, 102 (2007). 10.1126/science.1139366
14. I. B. Kobiakov, Solid State Commun. 35, 305 (1980). 10.1016/0038-1098(80)90502-5
15. J. Pal, G. Tse, V. Haxha, M. A. Migliorato, and S. Tomić, Phys. Rev. B 84, 085211 (2011). 10.1103/PhysRevB.84.085211
16. H. Y. S. Al-Zahrani, J. Pal, and M. A. Migliorato, Nano Energy 2, 1214 (2013). 10.1016/j.nanoen.2013.05.005
17. H. Y. S. Al-Zahrani, J. Pal, M. A. Migliorato, G. Tse, and D. Yu, Nano Energy 14, 382 (2015). 10.1016/j.nanoen.2014.11.046
18. D. R. Clarke, J. Am. Ceram. Soc. 82, 485 (1999). 10.1111/j.1151-2916.1999.tb01793.x
19. P. M. Verghese and D. R. Clarke, J. Appl. Phys. 87, 4430 (2000). 10.1063/1.373088
20. P. R. Emtage, J. Appl. Phys. 48, 4372 (1977). 10.1063/1.323391
21. T. K. Gupta, M. P. Mathur, and W. G. Carlson, J. Electron. Mater. 6, 483 (1977). 10.1007/BF02672229
22. J. Wong and F. P. Bundy, Appl. Phys. Lett. 29, 49 (1976). 10.1063/1.88869
23. R. Baraki, N. Novak, T. Frömling, T. Granzow, and J. Rödel, Appl. Phys. Lett. 105, 111604 (2014). 10.1063/1.4895941
24. G. Blatter and F. Greuter, Phys. Rev. B 33, 3952 (1986). 10.1103/PhysRevB.33.3952
25. G. Blatter and F. Greuter, Phys. Rev. B 34, 8555 (1986). 10.1103/PhysRevB.34.8555
26. F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990). 10.1088/0268-1242/5/2/001
27. G. E. Pike and C. H. Seager, J. Appl. Phys. 50, 3414 (1979). 10.1063/1.326334
28. M. S. Castro, G. M. Nuñez, D. E. Resasco, and C. M. Aldao, J. Am. Ceram. Soc. 75, 800 (1992). 10.1111/j.1151-2916.1992.tb04144.x
29. S.-T. Li, Y. Yang, L. Zhang, P.-F. Cheng, and J.-Y. Li, Chin. Phys. Lett. 26, 077201 (2009). 10.1088/0256-307X/26/7/077201
30. A. Vojta and D. R. Clarke, J. Appl. Phys. 81, 985 (1997). 10.1063/1.364226
31. A. Vojta, Q. Z. Wen, and D. R. Clarke, Comput. Mater. Sci. 6, 51 (1996). 10.1016/0927-0256(96)00011-0
32. M. Bartkowiak, G. D. Mahan, F. A. Modine, M. A. Alim, R. Lauf, and A. McMillan, J. Appl. Phys. 80, 6516 (1996). 10.1063/1.363645
33. H. Wang, M. Bartkowiak, F. A. Modine, R. B. Dinwiddie, L. A. Boatner, and G. D. Mahan, J. Am. Ceram. Soc. 81, 2013 (1998). 10.1111/j.1151-2916.1998.tb02582.x
34. Y. Sato, M. Yodogawa, T. Yamamoto, N. Shibata, and Y. Ikuhara, Appl. Phys. Lett. 86, 152112 (2005). 10.1063/1.1899762
35. R. T. Tung, Appl. Phys. Lett. 58, 2821 (1991). 10.1063/1.104747
36. R. T. Tung, Phys. Rev. B 45, 13509 (1992). 10.1103/PhysRevB.45.13509
37. J. H. Werner and H. H. Güttler, Phys. Scr. 1991, 258 10.1088/0031-8949/1991/T39/039.
38. J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991). 10.1063/1.347243
39. D. F. Crisler, J. J. Cupal, and A. R. Moore, Proc. Inst. Electr. Electron. Eng. 56, 225 (1968). 10.1109/PROC.1968.6246
40. P. Q. Mantas and J. L. Baptista, J. Eur. Ceram. Soc. 15, 605 (1995). 10.1016/0955-2219(95)00025-P